TPC6103 Toshiba Semiconductor, TPC6103 Datasheet - Page 4

• Manufacturer Part Number: TPC6103
• Description: Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

−10
100
0.3
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
30
10
−0.1
0
0
3
1
0
0
−5
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−0.3
−0.4
−0.5
Drain-source voltage V
Gate-source voltage V
−2.5
−4, −4.5
−1.8
Drain current I
−1.9
−3
−1
−2
−0.8
−1
25°C
I
I
|Y
Ta = −55°C
D
D
25°C
fs
– V
– V
100°C
−3
| – I
100°C
DS
GS
−1.2
−1.5
D
Ta = −55°C
D
Common source
Ta = 25°C Pulse test
−10
GS
DS
(A)
V GS = −1.4 V
(V)
(V)
−1.6
−2
−30
−1.7
−1.6
−1.5
−100
−2.0
−2.5
4
−0.8
−0.6
−0.4
−0.2
0.03
0.01
−10
0.3
0.1
−8
−6
−4
−2
−1
−0.1
0
0
1
0
0
−1.1 A
−2.5
−0.3
−1
−2
Drain-source voltage V
Gate-source voltage V
−4
−3
−5
Drain current I
−1
V GS = −4.5 V
R
−2
−2
V
−4
DS (ON)
−1.8 V
I
DS
D
– V
−3
– V
DS
GS
– I
−3
−6
D
Common source
Ta = 25°C Pulse test
D
−10
GS
Common source
Ta = 25°C
Pulse test
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = −1.4 V
(V)
(V)
−4
−8
I D = −4.5 A
−2.5 V
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−30
−2.2 A
2004-07-06
TPC6103
−1.7
−1.6
−1.9
−1.8
−100
−10
−5