TPC8110 Toshiba Semiconductor, TPC8110 Datasheet - Page 2

• Manufacturer Part Number: TPC8110
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
• Manufacturer: Toshiba Semiconductor

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
TPC8110
(Note 5)
(a) Device mounted on a glass-epoxy board (a)
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
DD
= −24 V, T
Characteristics
※
(a)
ch
Type
= 25°C (initial), L = 1.0 mH, R
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
65.8
Max
125
= 25 Ω, I
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
Unit
AR
= −8 A
(b)
25.4 × 25.4 × 0.8
FR-4
(unit: mm)
2002-05-24
TPC8110