TPC8119 Toshiba Semiconductor, TPC8119 Datasheet - Page 5

• Manufacturer Part Number: TPC8119
• Description: Lithium-Ion Battery Applications
• Manufacturer: Toshiba Semiconductor

10000
1000
100
1.6
1.2
0.8
0.4
10
40
32
24
16
−0.1
8
0
−80
2
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(2)
V GS = −4 V
Drain−source voltage V
−40
Ambient temperature Ta (
Ambient temperature Ta (
V GS = −10 V
40
Capacitance – V
−1
0
(1)Device mounted on a glass-epoxy board
(2)Device mounted on a glass-epoxy board
t = 10 s
R
(a) (Note 2a)
(b) (Note 2b)
DS (ON)
P
D
40
80
– Ta
−5 A
– Ta
−10
−5,−10 A
80
DS
−10 A
DS
I D = −2.5 A
120
I D = −2.5 A
°
°
C)
(V)
C)
120
C iss
C oss
C rss
−100
160
160
5
−100
−0.1
−2.5
−1.5
−0.5
−10
−30
−20
−10
−1
−2
−1
−80
0
0
0
0
V DD = −24V
−12
−6
Common source
V DS = −10 V
I D = −1mA
Pulse test
Drain−source voltage V
−40
V DS
10
Ambient temperature Ta (
0.2
Total gate charge Q
−10
Dynamic input/output
20
0
characteristics
0.4
I
DR
V
th
−3
– V
40
V GS
−5
30
– Ta
−6
DS
0.6
−1
−4
80
40
g
DS
Common source
I D = −11 A
Ta = 25°C
Pulse test
−12
Common source
Ta = 25°C
Pulse test
(nC)
V GS = 0 V
V DD = −24V
0.8
°
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(V)
120
C
50
2009-09-29
TPC8119
160
60
1
−20
−10
−30
−25
−15
−5
0