TPCA8009-H Toshiba Semiconductor, TPCA8009-H Datasheet - Page 3

• Manufacturer Part Number: TPCA8009-H
• Description: High Speed Switching Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
I
C
|Y
C
Q
C
Q
Q
GSS
DRP
DSS
V
t
t
Q
DSF
on
off
oss
t
rss
t
iss
sw
gs
gd
th
fs
r
f
g
|
V
V
I
I
I
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
DR
I
GS
DS
DS
GS
DS
DS
DD
D
GS
= 10 mA, V
= 10 mA, V
= 10 mA, V
3
= 7 A
= 7 A, V
(Ta = 25°C)
= 150 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 10 V, I
∼ − 120 V, V
10 V
0 V
Test Condition
Test Condition
GS
w
D
D
D
GS
GS
GS
GS
= 10 μs
= 1 mA
= 3.5 A
DS
GS
= 3.5 A
GS
= 0 V
⎯
= 0 V
= −5 V
= −20 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 10 V,
I
D
V
= 3.5 A
DD
∼ − 75 V
V
OUT
150
150
100
Min
Min
2.0
2.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.23
Typ.
600
220
4.5
7.6
2.4
3.7
20
17
13
70
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCA8009-H
8
www.DataSheet4U.com
2007-12-18
Max
0.35
Max
−2.0
±10
100
4.0
14
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μA
μA
pF
ns
Ω
V
V
S
A
V