TPCA8010-H Toshiba Semiconductor, TPCA8010-H Datasheet
TPCA8010-H
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TPCA8010-H Summary of contents
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... 2.8 D (Note 2a 1.6 D (Note 2b (Note 150 ch T 55~150 stg 1 TPCA8010-H TENTATIVE 0.4±0.1 1.27 0.5±0.1 0. 0.15±0. 5.0±0.2 0.95±0.05 0. 1.1±0.2 4 Unit V 4.25±0 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN A JEDEC ? W ...
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... Year of manufacture (One low-order digits of calendar year) Symbol Max R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 (Unit: mm) 1 mH， TPCA8010-H TENTATIVE Unit FR-4 25.4 25.4 0.8 (Unit: mm) (b) ， 2004-3-2 ...
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... gs1 V 160 (Ta 25°C) Symbol Test Condition I DRP V I 5.5A, V DSF TPCA8010-H TENTATIVE Min Typ. Max ± 100 0 V 200 -5 V 200 -20 V 150 1mA 2.0 4.0 2.7A 0.38 ‘(0.45) 2.7A TBD TBD 600 MHz ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 4 TPCA8010-H 000707EAA 2004-3-2 ...