SSM3K01T Toshiba Semiconductor, SSM3K01T Datasheet

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SSM3K01T

Manufacturer Part Number
SSM3K01T
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

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High Speed Switching Applications
·
·
·
Maximum Ratings
Handling Precaution
Small Package
Low on Resistance : R
Low Gate Threshold Voltage: V
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note1: Mounted on FR4 board
Note2: The pulse width limited by max channel temperature.
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
The Channel-to-Ambient thermal resistance R
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm
Characteristic
: R
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
on
on
(Ta = = = = 25°C)
Pulse
DC
= 120 mΩ (max) (@V
= 150 mΩ (max) (@V
(@V
th
= 0.6~1.1 V
DS
Symbol
SSM3K01T
V
= 3 V, I
V
T
I
T
P
GSS
I
DP
DS
stg
D
(Note2)
(Note1)
ch
D
GS
GS
D
= 0.1 mA)
= 4 V)
= 2.5 V)
th (ch-a)
-55~150
Rating
2
1250
±10
150
3.2
6.4
, t = 10 s)
30
1
and the drain power dissipation P
Unit
mW
°C
°C
V
V
A
Weight: 10 mg (typ.)
JEDEC
JEITA
TOSHIBA
D
vary according to
SSM3K01T
2-3S1A
2002-01-24
Unit: mm

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SSM3K01T Summary of contents

Page 1

... Rating ±10 V GSS I 3 6.4 (Note2 1250 (Note1) T 150 ch -55~150 T stg and the drain power dissipation P th (ch-a) 1 SSM3K01T Unit °C JEDEC °C JEITA TOSHIBA 2-3S1A Weight (typ.) vary according to D 2002-01-24 Unit: mm ― ― ...

Page 2

... R G D.U. < < (c) V COMMON SOURCE OUT 25°C DS requires higher voltage than V GS (on) < V < (off (on) 2 SSM3K01T Min Typ. Max = 0 ¾ ¾ ±1 ¾ ¾ 30 ¾ ¾ ¾ 0.6 1.1 ¾ (Note3) 2.6 5.2 ¾ (Note3) 85 120 ¾ ...

Page 3

... Common Source 200 2 1.3 A 150 100 1 -50 - Ambient temperature Ta (°C) 1000 100 10 10 0.1 1 Drain-Source voltage V 3 SSM3K01T I – 25°C -25°C 1.5 2 2.5 3 (V) GS – (ON 100 125 150 C – Common Source ...

Page 4

... DC 0.5 0. Ambient temperature Ta (°C) 1 100 r – Single pulse Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1 Pad: 645 mm 0 Pulse width tw (s) 4 SSM3K01T P – Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1 Pad: 645 mm ) 100 125 150 2 ) 100 1000 2002-01-24 ...

Page 5

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 SSM3K01T 000707EAA 2002-01-24 ...

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