SSM3K01T Toshiba Semiconductor, SSM3K01T Datasheet - Page 2

• Manufacturer Part Number: SSM3K01T
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
• Manufacturer: Toshiba Semiconductor

Marking
Electrical Characteristics
Switching Time Test Circuit
Precaution
(a) Test circuit
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note3: Pulse test
2.5 V
this product. For normal switching operation, V
lower voltage than V
V
(relationship can be established as follows: V
Please take this into consideration for using the device.
V
0
th
GS
1
10 ms
can be expressed as voltage between gate and source when low operating current value is I
recommended voltage of 2.5 V or higher to turn on this product.
K W
3
Characteristic
IN
2
Turn-on time
Turn-off time
th
.
I
D
V
DD
(Ta = = = = 25°C)
OUT
V
V
R
D.U. < = 1%
V
COMMON SOURCE
Ta = 25°C
R
R
Symbol
(BR) DSS
DD
IN
Equivalent Circuit
G
DS (ON)
DS (ON)
I
I
C
|Y
C
C
GSS
DSS
V
t
t
: t
= 4.7 W
oss
on
off
rss
iss
th
fs
= 15 V
r
, t
|
f
< 5 ns
GS (off)
1
GS (on)
V
I
V
V
V
I
I
V
V
V
V
V
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= 1 mA, V
= 1.6 A, V
= 1.3 A, V
2
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= ±10 V, V
= 15 V, I
= 0~2.5 V, R
3
< V
requires higher voltage than V
th
(b) V
(c) V
Test Condition
2
D
D
GS
GS
GS
D
< V
= 0.1 mA
= 1.6 A
GS
GS
GS
GS
= 0.5 A
DS
V
V
= 0
= 4 V
= 2.5 V
GS (on)
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
GS
DS
OUT
IN
= 0
= 4.7 W
)
2.5 V
0
V
V
DD
DS (ON)
(Note3)
(Note3)
(Note3)
Min
0.6
2.6
t
30
¾
¾
¾
¾
¾
¾
¾
¾
¾
10%
on
th
t
and V
r
Typ.
115
152
102
5.2
85
41
45
69
¾
¾
¾
¾
GS (off)
SSM3K01T
90%
t
off
2002-01-24
D
Max
120
150
1.1
±1
¾
¾
¾
¾
¾
¾
¾
= 100 mA for
1
90%
t
f
10%
requires
Unit
mW
mW
mA
mA
pF
pF
pF
nS
V
V
S