SSM3K01T Toshiba Semiconductor, SSM3K01T Datasheet - Page 4

• Manufacturer Part Number: SSM3K01T
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
• Manufacturer: Toshiba Semiconductor

1000
0.01
100
0.1
10
10
0.01
1
0.1
Mounted on FR4 board
(25.4 mm ´ 25.4 mm
Cu Pad: 645 mm
*: Single nonrepetitive
I D max (continuous)
I D max (pulsed)
´ 1.6 t,
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
DC operation
t on
t r
Ta = 25°C
Drain-source voltage V
1000
100
10
0.001
Drain current I
Safe operating area
1
2
1
)
t – I
0.1
10 s*
D
t off
t f
D
0.01
10
DS
(A)
Common Source
V DD = 15 V
V GS = 0~2.5 V
R G = 4.7 W
Ta = 25°C
10 ms*
V DSS
max
(V)
1 ms*
0.1
100
1
Pulse width tw (s)
r
th
– tw
1
4
1.25
0.75
0.25
1.5
0.5
1
0
0
10
DC
t = 10 s
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm
25
Ambient temperature Ta (°C)
100
50
2
)
P
D
75
– Ta
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm
1000
100
2
125
SSM3K01T
）
2002-01-24
150