SSM3K01T Toshiba Semiconductor, SSM3K01T Datasheet - Page 3

• Manufacturer Part Number: SSM3K01T
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
• Manufacturer: Toshiba Semiconductor

200
160
120
3.5
2.5
1.5
0.5
0.1
10
80
40
0.01
4
3
2
1
0
0
1
0
0
Common Source
V DS = 3 V
Ta = 25°C
10
Common Source
Ta = 25°C
4.0
Drain-Source voltage V
1
0.5
Drain current I
Drain current I
2.5
V GS = 2.5 V
V GS = 4 V
0.1
2.1
R
DS (ON)
2
I
|Y
D
fs
– V
| – I
1
DS
– I
D
D
D
3
D
DS
(A)
1
(A)
Common Source
Ta = 25°C
1.9 V
1.7 V
V GS = 1.5 V
1.5
(V)
4
10
2
5
3
10000
1000
1000
0.01
100
250
200
150
100
100
0.1
10
50
10
-50
1
0
0.1
0
Common Source
V DS = 3 V
Common Source
-25
0.5
Drain-Source voltage V
Gate-Source voltage V
Ambient temperature Ta (°C)
0
100°C
V GS = 2.5 V, I D = 1.3 A
1
V GS = 4 V, I D = 1.6 A
1
R
25
DS (ON)
I
C – V
D
– V
1.5
50
DS
GS
-25°C
– Ta
Ta = 25°C
75
10
2
GS
DS
Common Source
V GS = 0
f = 1 MHz
Ta = 25°C
100
(V)
(V)
C oss
C rss
2.5
SSM3K01T
C iss
125
2002-01-24
150
100
3