SSM3K101TU Toshiba Semiconductor, SSM3K101TU Datasheet - Page 3

• Manufacturer Part Number: SSM3K101TU
• Description: Silicon N Channel MOS Type High Speed Switching Applications
• Manufacturer: Toshiba Semiconductor

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200
180
160
140
120
100
260
240
220
200
180
160
140
120
100
80
60
40
20
80
60
40
20
5
4
3
2
1
0
0
0
0
0
0
ID=0.2A
1
0.2
Drain-Source voltage VDS (V)
Gate-Source voltage VGS (V)
1.8V
2
VGS=4V
1
0.5A
2.5V
Drain current ID (A)
3
VGS=1.2V
RDS(ON) - ID
10
RDS(ON) - VGS
0.4
1A
4
2
ID - VDS
4.0
5
Common Source
Ta=25°C
0.6
Common Source
Ta=25°C
Common Source
Ta=25°C
6
3
7
2.5
1.8
1.5
0.8
8
4
9
10
5
1
3
0.0001
0.001
0.01
300
250
200
150
100
0.1
0.8
0.6
0.4
0.2
50
10
0
1
1
0
-60 -40 -20 0
-60 -40 -20 0
0
Common Source
Ambient temperature Ta(°C)
Ta=85°C
Ambient temperature Ta( ℃ )
Gate-Source voltage VGS (V)
2.5V,0.5A
RDS(ON) - Ta
20 40 60 80 100 120 140 160
20 40 60 80 100 120 140 160
-25°C
ID - VGS
Vth - Ta
25°C
1
VGS=4V,ID=1A
1.8V,0.2A
Common Source
ID=1mA
VDS=3V
Common Source
VDS=3V
SSM3K101TU
2007-11-01
2