HCT7000 ETC, HCT7000 Datasheet
HCT7000
Manufacturer Part Number
HCT7000
Description
N- Channel En hance ment Mode MOS Transistor
Manufacturer
ETC
Datasheet
1.HCT7000.pdf
(2 pages)
Prod uct Bul le tin HCT7000M
Janu ary 1996
N- Channel En hance ment Mode MOS Tran sis tor
Type HCT7000M, HCT7000MTX, HCT7000MTXV
Op tek Tech nol ogy, Inc.
Fea tures
De scrip tion
The HCT7000M is a high performance
enhancement mode N-channel MOS
transistor chip packaged in the ultra
small 3 pin ceramic LCC package.
Electrical characteristics are similar to
those of the JEDEC 2N7000. The pin-
out and footprint matches that of most
enhancement mode MOS transistors
built in SOT23 plastic packages.
The HCT7000M is available processed
to TX and TXV levels per MIL-PRF-
19500. Order HCT7000MTX or
HCT7000MTXV. Typical screening and
lot acceptance tests are provided on
page 13-4. TX and TXV products
receive a V
at 150
260 hrs. at 150
200mA I
Ultra small surface mount package
R
Pin-out compatible with most SOT23
MOSFETS
DS(ON)
o
C and a V
D
GS
5
HTRB at 24 V for 48 hrs.
o
C.
DS
HTRB at 48 V for
1215 W. Crosby Road
Ab so lute Maxi mum Rat ings
Drain- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Power Dis si pa tion (T
Power Dis si pa tion (T
Op er at ing and Stor age Tem pera ture . . . . . . . . . . . . . . . . . . . . . . . . -55
Ther mal Re sis tance R
Ther mal Re sis tance R
Notes:
(1) T
(2) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measurable as an outgoing test.
S
= Substrate temperature that the chip carrier is mounted on.
Car roll ton, Texas 75006
15-36
A
S
(1)
= 25
JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
= 25
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583
o
C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
o
C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
(972) 323- 2200
Fax (972) 323- 2396
o
C to +150
100
o
o
40 V
C/W
C/W
o
(2)
C
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HCT7000 Summary of contents
Page 1
... Prod uct Bul le tin HCT7000M Janu ary 1996 N- Channel En hance ment Mode MOS Tran sis tor Type HCT7000M, HCT7000MTX, HCT7000MTXV Fea tures 200mA I D Ultra small surface mount package R 5 DS(ON) Pin-out compatible with most SOT23 MOSFETS De scrip tion The HCT7000M is a high performance ...
Page 2
... Types HCT7000M, HCT7000MTX, HCT7000MTXV Elec tri cal Char ac ter is tics ( SYM BOL PA RAME TER V Drain-Source Voltage DSS V Gate Threshold Voltage GS(TH) I Gate Leakage GSS I Zero Gate Voltage Drain Current DSS I On-State Drain Current D(ON) R Drain-Source on-Resistance DS(ON) V Drain-Source on-Voltage DS(ON) G Forward Transconductance fs C Input Capacitance ...