HAT2054M Hitachi Semiconductor, HAT2054M Datasheet
HAT2054M
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HAT2054M Summary of contents
Page 1
... Silicon N Channel Power MOS FET Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP–6 HAT2054M Power Switching Drain S 4 ADE-208-756B(Z) December 1998 ...
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... HAT2054M Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the alumina ceramic board ( 0.7 mm), PW 5s,Ta= ...
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... Package Dimensions 0.3 0.1 1.0 1.0 2.95 0.15 + 0.10 0.15 – 0. 0.1 Hitachi Code TSOP-6 EIAJ JEDEC HAT2054M Unit ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...