HAT3004R Hitachi, HAT3004R Datasheet
HAT3004R
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HAT3004R Summary of contents
Page 1
... Silicon N Channel / P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable gate drive Low drive current High density mounting Outline SOP– HAT3004R Drain ...
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... HAT3004R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Channel dissipation Channel dissipation Channel temperature Storage temperature Note duty cycle 2. 1 Drive operation : When using the glass epoxy board (FR4 1.6 mm ...
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... V — 0.9 1 — 50 — rr HAT3004R Unit Test Conditions 10mA ±100 ±16V 10V 1mA DS ...
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... HAT3004R Electrical Characteristics (P channel) (Ta = 25°C) Item Symbol Drain to source breakdown V voltage Gate to source breakdown V voltage Gate to source leak current I GSS Zero gate voltege drain I DSS current Gate to source cutoff voltage V Static drain to source on state R resistance R Forward transfer admittance |y Input capacitance ...
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... DS Drain to Source Saturation Voltage vs. 0.5 0 75°C 0.3 0.2 0 Pulse Test (V) GS HAT3004R Typical Output Characteristics Pulse Test Drain to Source Voltage V (V) DS Gate to Source Voltage Pulse Test ...
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... HAT3004R Main Characteristics (N channel) Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0 Drain Current I Forward Transfer Admittance vs. Drain Current –25 ° ° °C 1 0.5 0.2 0.1 1 0.2 0.5 2 Drain Current I 6 Static Drain to Source on State Resistance 0.20 Pulse Test 0.16 0.12 0.08 0. – ...
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... d(off d(on (A) Source to Drain Voltage V D HAT3004R Dynamic Input Characteristics Gate Charge Qg (nc) Reverse Drain Current vs. Souece to Drain Voltage ...
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... HAT3004R Main Characteristics (P channel) Maximum Safe Operation Area –100 –30 –10 –3 –1 Operation in –0.3 this area is limited by R DS(on) –0 °C –0.03 1 shot Pulse 1 Drive Operation –0.01 –0.1 –0.3 –1 –3 Drain to Source Voltage V Note 5 : When using the glass epoxy board (FR4 40x40x1 ...
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... V = – Pulse Test 5 –5 –10 –20 –0.1 (A) D HAT3004R vs. Temperature I = – – –1 A, –0.5 A –2 A, –1 A, –0.5 A – 120 Case Temperature Tc (°C) Body–Drain Diode Reverse Recovery Time µ ° ...
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... HAT3004R Main Characteristics (P channel) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 Ciss 300 Coss 100 Crss –10 –20 Drain to Source Voltage V Switching Characteristics 500 V = – – µs, duty < 200 100 –0.1 –0.2 – ...
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... Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 150 Ambient Temperature HAT3004R 200 Ta (°C) 11 ...
Page 12
... HAT3004R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ – f( (t) • – 125 °C/ °C When using the glass epoxy board (FR4 40x40x1 ...
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... L V Vin DD 50W = Switching Time Test Circuit Vout Vin Monitor Monitor D.U. Vin DD 50W = –10 V – channel Switching Time Waveform 10% Vin Vout 10% 90% td(on channel Switching Time Waveform Vin 10% 90% 10% Vout td(on) tr HAT3004R 90% 10% 90% td(off 90% 90% 10% td(off ...
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... HAT3004R Package Dimensions 5.3 Max 8 1 0.75 Max 1.27 *0.42 0.08 0.40 0.06 *Dimension including the plating thickness Base material dimension 14 4. 0.60 0.15 0.25 M Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit 0.10 6.10 – 0.30 1.08 0 – 0.67 – 0.20 FP-8DA Conforms — 0.085 g ...
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... Fax : <852>-(2)-730-0281 (Taipei Branch Office) URL : http://www.hitachi.com.hk 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. HAT3004R Colophon 2.0 15 ...