HAT3004R Hitachi, HAT3004R Datasheet - Page 8

• Manufacturer Part Number: HAT3004R
• Description: Silicon N-Channel / P-Channel Power MOSFET
• Manufacturer: Hitachi

HAT3004R
Main Characteristics (P channel)
8
–0.03
–0.01
–100
–0.1
–0.3
–30
–10
–20
–16
–12
–3
–1
–8
–4
–0.1
0
Ta = 25 °C
1 shot Pulse
1 Drive Operation
Note 5 :
Operation in
this area is
limited by R
Drain to Source Voltage V
Gate to Source Voltage V
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Maximum Safe Operation Area
Typical Transfer Characteristics
–0.3
Tc = –25 °C
–2
25 °C
–1
DS(on)
–4
–3
–6
V
Pulse Test
10 µs
–10
DS
75 °C
= –10 V
GS
DS
–8
–30
(V)
(V)
–100
–10
–0.5
–0.4
–0.3
–0.2
–0.1
–20
–16
–12
–8
–4
0
0
Drain to Source Saturation Voltage vs.
Drain to Source Voltage V
Gate to Source Voltage V
–10 V
Typical Output Characteristics
–2
–2
Gate to Source Voltage
–8 V
–4
–4
–6
–6
V
GS
Pulse Test
Pulse Test
= –2.5 V
I = –2 A
D
–8
–8
GS
DS
(V)
(V)
–0.5 A
–1 A
–10
–10