HAT3004R Hitachi, HAT3004R Datasheet - Page 6

• Manufacturer Part Number: HAT3004R
• Description: Silicon N-Channel / P-Channel Power MOSFET
• Manufacturer: Hitachi

HAT3004R
Main Characteristics (N channel)
6
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
20
10
Static Drain to Source on State Resistance
1
5
2
1
0.2
0.2
Pulse Test
Forward Transfer Admittance vs.
0.5
0.5
Drain Current I
Drain Current I
25 °C
vs. Drain Current
Drain Current
1
1
Tc = –25 °C
75 °C
2
2
D
V
Pulse Test
D
(A)
5
5
DS
(A)
= 10 V
10
10
20
20
0.20
0.16
0.12
0.08
0.04
500
200
100
–40
50
20
10
5
Static Drain to Source on State Resistance
0
0.1
Pulse Test
Reverse Drain Current I
0.2
Case Temperature Tc (°C)
Body–Drain Diode Reverse
V
10 V
0
GS
vs. Temperature
= 4 V
Recovery Time
0.5
40
di/dt = 20 A/µs
V
GS
1
I = 5 A
D
80
= 0, Ta = 25°C
2
1 A, 2 A, 5 A
2 A
DR
120
(A)
5
1 A
160
10