HAT3004R Hitachi, HAT3004R Datasheet - Page 5

• Manufacturer Part Number: HAT3004R
• Description: Silicon N-Channel / P-Channel Power MOSFET
• Manufacturer: Hitachi

Main Characteristics (N channel)
0.03
0.01
100
0.3
0.1
30
10
20
16
12
3
1
8
4
0
0.1
Ta = 25°C
1 shot Pulse
1 Drive Operation
Operation in
this area is
limited by R
Drain to Source Voltage V
Note 5 :
Gate to Source Voltage V
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
–25°C
2
25°C
1
DS(on)
4
3
Tc = 75°C
6
10
V
Pulse Test
10 µs
DS
DS
GS
8
(V)
30
= 10 V
(V)
100
10
0.5
0.4
0.3
0.2
0.1
20
16
12
8
4
0
0
Drain to Source Saturation Voltage vs.
10V
Drain to Source Voltage V
Gate to Source Voltage V
Typical Output Characteristics
8 V
2
2
Gate to Source Voltage
6 V
V
4
4
GS
= 2.5 V
4.5 V
3.5 V
6
6
5 V
4 V
3 V
I = 5 A
Pulse Test
D
Pulse Test
HAT3004R
GS
DS
8
8
1 A
2 A
(V)
(V)
10
10
5