UPA1758 NEC, UPA1758 Datasheet

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UPA1758

Manufacturer Part Number
UPA1758
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet
1.UPA1758.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
UPA1758G
Quantity:
104
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
notebook computers, and Li-ion battery application.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Notes 1. PW
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of
Dual MOS FET chips in small package
2.5 V gate drive type low on-state resistance
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 2000 mm
iss
PA1758G
D12911EJ1V0DS00 (1st edition)
October 1998 NS CP(K)
= 30 m
= 40 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
: C
iss
= 1100 pF (TYP.)
10 s, Duty cycle
(MAX.) (V
(MAX.) (V
Note1
DS
GS
The information in this document is subject to change without notice.
= 0)
GS
GS
= 0)
Note2
Note2
= 4.5 V, I
= 2.5 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
1 %
A
D
D
= 3.0 A)
= 3.0 A)
= 25 °C)
INDUSTRIAL USE
I
I
D(pulse)
V
V
D(DC)
T
T
P
P
DSS
GSS
DATA SHEET
stg
ch
T
T
SWITCHING
2
–55 to + 150
x 1.1 mm
±12.0
±6.0
MOS FIELD EFFECT TRANSISTOR
±24
150
1.7
2.0
30
PACKAGE DRAWING (Unit : mm)
°C
°C
W
W
V
V
A
A
8
1
5.37 Max.
0.40
1.27
+0.10
–0.05
0.78 Max.
5
4
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
0.12 M
1
2
7, 8
3
4
5, 6
0.5 ±0.2
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
6.0 ±0.3
Source
Drain
PA1758
4.4
Body
Diode
©
0.8
0.10
1998

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UPA1758 Summary of contents

Page 1

... Duty cycle 2. Mounted on ceramic substrate of 2000 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 100 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 50˚ 25˚ =25˚ ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE V =2. 100 Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1000 100 10 0 ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...

Page 6

PA1758 ...

Page 7

PA1758 7 ...

Page 8

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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