UPA2708TP NEC, UPA2708TP Datasheet

UPA2708TP

Manufacturer Part Number

UPA2708TP

Description

SWITCHING N- AND P-CHANNEL POWER MOS FET

Manufacturer

NEC

Datasheet

1.UPA2708TP.pdf (7 pages)

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Document No. G17034EJ1V0DS00 (1st edition)

Date Published June 2005 NS CP(K)

Printed in Japan

• Low on-state resistance

• Low C

• Small and surface mount package (Power HSOP8)

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. PW ≤ 10

THERMAL RESISTANCE

Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

DESCRIPTION

channel MOS Field Effect Transistor designed for

DC/DC converter and power management applications

of notebook computer.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Total Power Dissipation

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Channel to Ambient

Channel to Case

The

DS(on)1

DS(on)2

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec

3. Starting T

iss

PA2708TP which has a heat spreader is N-

= 5.5 mΩ MAX. (V

= 7.5 mΩ MAX. (V

: C

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

= 4700 pF TYP. (V

s, Duty Cycle ≤ 1%

Note

Note1

= 25°C, V

Note2

Note3

= 25°C)

= 0 V)

= 10 V, I

= 4.5 V, I

N-CHANNEL POWER MOS FET

= 15 V, R

= 10 V, V

= 9.0 A)

= 25°C, All terminals are connected.)

= 25 Ω, L = 100

DATA SHEET

SWITCHING

= 0 V)

D(pulse)

D(DC)

th(ch-A)

th(ch-C)

DSS

GSS

stg

MOS FIELD EFFECT TRANSISTOR

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in

−55 to +150

H, V

96.2

3.68

PA2708TP-E1-AZ

PA2708TP-E2-AZ

28.9

±20

±40

±68

150

4.3

external electrode.)

PART NUMBER

PA2708TP-E1

PA2708TP-E2

= 20 → 0 V

°C/W

°C

Note

PA2708TP

Power HSOP8

PACKAGE

2004

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UPA2708TP Summary of contents

Page 1

... The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17034EJ1V0DS00 (1st edition) ...

Page 2

... GS BV DSS Starting T ch TEST CIRCUIT 3 GATE CHARGE D.U. Ω 25°C, All terminals are connected.) A TEST CONDITIONS DSS DS GS ± GSS GS(off ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 T - Case Temperature - C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 10 1 ...

Page 4

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2 0.5 DS Pulsed 0 - 100 T - Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed ...

Page 5

SWITCHING CHARACTERISTICS 1000 t d(off) 100 d(on Ω 0 Drain Current - A D SOURCE ...

Page 6

PACKAGE DRAWING (Unit: mm) Power HSOP8 Source 4 : Gate Drain 6.0 ±0 0.8 ±0.2 4.4 ±0.15 +0.17 5.2 –0.2 S 1.27 TYP. +0.10 0.40 0.12 M ...

Page 7

... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • ...

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