UPA2756GR NEC, UPA2756GR Datasheet
UPA2756GR
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UPA2756GR Summary of contents
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... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed 4 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 Drain to Source Voltage - V DS ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 180 Pulsed 160 140 120 100 -50 - 100 125 ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 4 Ω 20→ Starting T = 25°C ch 0.1 µ µ 10 ...
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... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • ...