UPA2756GR NEC, UPA2756GR Datasheet

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UPA2756GR

Manufacturer Part Number
UPA2756GR
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC
Datasheet

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Part Number:
UPA2756GR-E1
Manufacturer:
NEC
Quantity:
20 000
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
DESCRIPTION
Transistor designed for switching applications.
FEATURES
• Low on-state resistance
• Low C
• Built-in G-S protection diode against ESD
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy
Notes 1. Mounted on ceramic substrate of 2000 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The
R
R
DS(on)1
DS(on)2
µ
2. PW ≤ 10
3. Starting T
4. I
PA2756GR is Dual N-channel MOS Field Effect
PART NUMBER
iss
µ
= 105 mΩ MAX. (V
= 150 mΩ MAX. (V
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
: C
AR
PA2756GR
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
≤ 4.0 A, T
= 260 pF TYP.
µ
Note1
ch
s, Duty Cycle ≤ 1%
Note2
= 25°C, V
ch
≤ 150°C
Note3
Note3
DS
GS
GS
GS
= 0 V)
Note4
= 0 V)
= 10 V, I
= 4.0 V, I
DD
Note1
Note1
= 30 V, R
N-CHANNEL POWER MOS FET
D
Power SOP8
D
PACKAGE
I
= 2.0 A)
I
D(pulse)
= 2.0 A)
V
V
D(DC)
E
P
P
T
E
T
I
A
GSS
DSS
AS
stg
AS
AR
G
T1
T2
ch
= 25°C)
= 25 Ω, V
DATA SHEET
SWITCHING
−55 to +150
2
x 2.2 mm
GS
±4.0
150
±20
±16
1.6
2.0
4.0
1.6
1.6
60
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V
mJ
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
Gate 1
0.40
Gate
Protection
Diode
1.27
µ
+0.10
–0.05
0.78 MAX.
5
4
PA2756GR
EQUIVALENT CIRCUIT
Source 1
0.12 M
Drain 1
1
2
7, 8: Drain 1
3
4
5, 6: Drain 2
Body
Diode
0.5 ±0.2
: Source 1
: Gate 1
: Source 2
: Gate 2
6.0 ±0.3
4.4
Gate 2
Gate
Protection
Diode
0.8
Source 2
Drain 2
0.10
Body
Diode
2005

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UPA2756GR Summary of contents

Page 1

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed 4 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 Drain to Source Voltage - V DS ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 180 Pulsed 160 140 120 100 -50 - 100 125 ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 4 Ω 20→ Starting T = 25°C ch 0.1 µ µ 10 ...

Page 7

... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • ...

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