UPA602T NEC, UPA602T Datasheet

no-image

UPA602T

Manufacturer Part Number
UPA602T
Description
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
Manufacturer
NEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPA602T-T1
Manufacturer:
RENESAS
Quantity:
7 420
Part Number:
UPA602T-T2
Manufacturer:
NEC
Quantity:
24 000
Company:
Part Number:
UPA602T-T2,,24000,SOT163,NEC
0
Document No. G11249EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
FEATURES
• Two MOS FET circuits in package the same size as
• Complement to PA603T
• Automatic mounting supported
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
The PA602T is a mini-mold device provided with two
SC-59
* PW
PARAMETER
10 ms, Duty Cycle
N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
50 %
SYMBOL
I
D(pulse)
V
I
V
D(DC)
T
T
P
DSS
GSS
stg
ch
T
*
DATA SHEET
A
–55 to +150
= 25 ˚C)
300 (Total)
RATINGS
100
200
150
50
20
MOS FIELD EFFECT TRANSISTOR
UNIT
mW
mA
mA
˚C
˚C
V
V
PACKAGE DIMENSIONS (in millimeters)
PIN CONNECTION (Top view)
0.95
0.32
2.9 ±0.2
1.9
+0.1
–0.05
0.95
PA602T
0.16
1.1 to 1.4
0.8
+0.1
–0.06
©
0 to 0.1
1996

UPA602T Summary of contents

Page 1

... Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature * PW 10 ms, Duty Cycle Document No. G11249EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR PACKAGE DIMENSIONS (in millimeters) PIN CONNECTION (Top view ˚C) A SYMBOL RATINGS UNIT DSS V 20 ...

Page 2

ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State Resistance R DS(on)1 Drain to Source On-State Resistance R DS(on)2 ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Case Temperature - ˚C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 120 ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 I D Pulsed 50 measurement Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide PA602T Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 6

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance ...

Related keywords