BUZ102SL Siemens Semiconductor Group, BUZ102SL Datasheet
BUZ102SL
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BUZ102SL Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • rated • 175°C operating temperature • also in SMD available V Type DS BUZ 102 Maximum Ratings ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance = MHz Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = ...
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Power dissipation tot C 130 W 110 P 100 tot 100 120 140 Safe operating area ...
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Typ. output characteristics parameter µ ° 110 P = 120W tot ...
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Drain-source on-resistance (on) j parameter 4 0.09 R 0.07 DS (on) 0.06 0.05 98% 0.04 typ 0.03 0.02 0.01 0.00 -60 - Typ. capacitances ...
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Avalanche energy parameter 222 µH GS 260 mJ 220 E 200 AS 180 160 140 120 100 ...