BUZ102SL Siemens Semiconductor Group, BUZ102SL Datasheet - Page 6

• Manufacturer Part Number: BUZ102SL
• Description: SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
= V
2 x I
110
100
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
A
A
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 120W
= 80 µs , T
DS(on)max
2
l
k
3
j
i
h
4
j
g
= 25 °C
D
5
= f (V
6
GS
7
)
e
c
a
f
d
b
V GS [V]
8
a
b
c
d
e
f
g
h
i
j
k
l
V
V
DS
GS
V
V
10.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
5.0
10
6
Typ. drain-source on-resistance
R
parameter: t
R
DS (on)
DS (on)
0.09
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
= I
V
V
GS
GS
2.5
3.0
a
a
10
a
p
D
[V] =
[V] =
= 80 µs, T
3.5
)
b
20
4.0
c
b
30
4.5
d
40
5.0
e
j
= 25 °C
c
5.5
50
f
6.0
g
60
d
6.5
h
70
7.0
BUZ 102 SL
i
30/Jan/1998
SPP47N05L
80
8.0
j
e
I
D
j
h
A
10.0
f
k
k
i
g
100