BUZ346 Siemens Semiconductor Group, BUZ346 Datasheet
BUZ346
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BUZ346 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 346 50 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage 116 ...
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Power dissipation tot C 180 W P tot 140 120 100 Safe operating area parameter 0.01 ...
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Typ. output characteristics parameter µs p 130 P = 170W tot 110 I D 100 ...
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Drain-source on-resistance (on) j parameter 0.045 R 0.035 DS (on) 0.030 0.025 98% 0.020 typ 0.015 0.010 0.005 0.000 -60 - Typ. ...
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Avalanche energy parameter 21.4 µ ...
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Package Outlines TO-218 AA Dimension in mm Semiconductor Group Not for new design 9 BUZ 346 07/96 ...