BUZ346 Siemens Semiconductor Group, BUZ346 Datasheet - Page 5

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BUZ346

Manufacturer Part Number
BUZ346
Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Semiconductor Group
D
tot
I
tot
D
= ( V
= ( T
10
10
10
10
180
140
120
100
80
60
40
20
W
A
0
3
2
1
0
10
DS
0
C
0
)
)
20
40
60
C
10
= 25°C
80
1
100
DC
t
120
p = 28.0µs
100 µs
1 ms
10 ms
V
T
V
°C
10
C
DS
2
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JC
D
= ( T
K/W
10
10
10
10
= ( t
60
50
45
40
35
30
25
20
15
10
A
-1
-2
-3
5
0
0
C
10
0
)
-7
p
)
20
GS
10
single pulse
-6
p
40
10 V
/ T
10
-5
60
Not for new design
10
-4
80
10
100
-3
10
120
-2
BUZ 346
D = 0.50
07/96
10
T
t
°C
0.20
0.10
0.05
0.02
0.01
p
C
-1
s
160
10
0

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