BUZ346 Siemens Semiconductor Group, BUZ346 Datasheet - Page 6

• Manufacturer Part Number: BUZ346
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
D
DS
=
130
110
100
2 x I
V
90
80
70
60
50
40
30
20
10
70
60
55
50
45
40
35
30
25
20
15
10
A
A
0
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
)
P
D
tot
1
p
x R
= 170W
p
= 80 µs
= 80 µs
2
DS(on)max
3
k
j
i
h
4
l
g
5
6
D
= f ( V
7
e
c
a
f
d
b
V GS [V]
8
a
b
c
d
e
f
g
h
i
j
k
l
GS
V
V
DS
GS
)
V
V
10.0
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
5.0
10
6
Typ. drain-source on-resistance
R
parameter: V
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
0.055
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
2 x I
50
40
35
30
25
20
15
10
S
5
0
0
0
=
V
D
GS
4.0
a
a
I
[V] =
x R
D
GS
p
20
10
4.5
b
)
= 80 µs,
b
DS(on)max
5.0
c
40
20
5.5
d
c
Not for new design
6.0
e
60
30
6.5
f
d
7.0
g
80
40
7.5
h
e
8.0
fs
i
100
BUZ 346
50
07/96
= f
9.0
j
I
D
I
f
D
( I
A
A
10.0
k
D
i
g
k
)
l
j
20.0
h
130
65
l