VG3617161ET-6 Powerchip, VG3617161ET-6 Datasheet
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VG3617161ET-6
Manufacturer Part Number
VG3617161ET-6
Description
1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM
Manufacturer
Powerchip
Datasheet
1.VG3617161ET-6.pdf
(68 pages)
VIS
Description
It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
power supply. This SDRAM is delicately designed with performance concern for current high-speed applica-
tion. Programmable CAS Latency and Burst Length make it possible to be used in widely various domains. It
is packaged by using JEDEC standard pinouts and standard plastic 50-pin TSOP II.
Features
Document:1G5-0189
• Single 3.3V +/- 0.3V power supply
• Clock frequency:166MHz, 143MHz, 125MHz
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Dual internal banks controlled by A11(Bank select)
• Simultaneous and independent two bank operation
• I/O level : LVTTL interface
• Random column access in every cycle
• X16 organization
• Byte control by LDQM and UDQM
• 4096 refresh cycles/64ms
• Burst termination by burst stop and precharge command
The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank.
Rev.2
CMOS Synchronous Dynamic RAM
1,048,576 x 16 - Bit
Page 1
VG3617161ET