MT16LSDF3264LHY-10E Micron, MT16LSDF3264LHY-10E Datasheet - Page 12

• Manufacturer Part Number: MT16LSDF3264LHY-10E
• Description: DRAM Module, 256MB, 512MB (x64, DR) 144Pin SDRAM SODIMM
• Manufacturer: Micron

AAbsolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 16; V
Table 11: I
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; V
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
a - Value calculated as one module rank in this operating condition, and all other ranks in Power-Down mode.
b - Value calculated reflects all module ranks in this operation condition.
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
OPERATING CURRENT: Active Mode; Burst = 2; READ or
WRITE;
STANDBY CURRENT: Power-Down Mode; All device banks
idle; CKE = LOW
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ
or WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; S# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs, NC or I/O Pins
Relative to V
Relative to V
t
RC =
t
RC (MIN)
DD
OUT
DD
IN
SS
Supply,
≤ V
SS
≤ V
Specifications and Conditions – 256MB
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
OUT
DD
. . . . . . . . . . . . . . . . . . . -1V to +4.6V
OUT
DD
Q
= 4mA)
= -4mA)
DD
t
t
Standard
Low power (L)
RFC =
RFC = 15.625µs
, V
DD
Q = +3.3V ±0.3V
Command and
Address Inputs
CK, CKE, S#
DQMB
DQ
t
RFC (MIN)
t
RCD
12
SYMBOL
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
SYMBOL
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +125°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
V
2
5
6
7
7
1
3
4
DD
a
b
a
a
b
b
b
b
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
, V
I
OPR
V
OZ
OH
I
OL
IH
IL
I
DD
DD
(Commercial - ambient) . . . . . . 0°C to +65°C
1,296
1,336
5,280
Q
-13E
416
144-PIN SDRAM SODIMM
, V
32
48
32
16
256MB, 512MB (x64, DR)
MIN
DD
Q = +3.3V ±0.3V
MAX
-0.3
1,216 1,136
1,216 1,136
4,960 4,320
-80
-40
-10
-10
2.4
-133
416
3
2
–
32
48
32
16
-10E
336
MAX
32
48
32
16
V
DD
©2004 Micron Technology, Inc. All rights reserved.
3.6
0.8
0.4
80
40
10
10
–
+ 0.3
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
UNITS
µA
µA
V
V
V
V
V
3, 12, 18, 19,
3, 17, 19, 32
3, 12, 19, 32
3, 18, 19, 32
NOTES
32,30
NOTES
32
4
22
22
33
33