MT16LSDF3264LHY-10E Micron, MT16LSDF3264LHY-10E Datasheet - Page 21

• Manufacturer Part Number: MT16LSDF3264LHY-10E
• Description: DRAM Module, 256MB, 512MB (x64, DR) 144Pin SDRAM SODIMM
• Manufacturer: Micron

Table 20: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; V
NOTE:
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. D 9/04 EN
1. The value of
99-125 Manufacturer-Specific Data (RSVD)
36–40 Reserved
42–61 Reserved
BYTE
65-71
73-90
95-98
126
127
31
32
33
34
35
41
62
63
64
72
91
92
93
94
Module Rank Density
Command and Address Setup Time,
Command and Address Hold Time,
Data Signal Input Setup Time,
Data Signal Input Hold Time,
Device Minimum Active/Auto-Refresh Time,
SPD Revision
Checksum for Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code (Continued)
Manufacturing Location
Module Part Number (ASCII)
PCB Identification Code
Identification Code (Cont.)
Year of Manufacture in BCD
Week of Manufacture in BCD
Module Serial Number
System Frequency
SDRAM Component and Clock Detail
t
RAS used for the -13E module is calculated from
DESCRIPTION
t
DH
t
DS
t
AH,
t
AS,
t
t
CMH
CMS
t
RC
ENTRY (VERSION)
DD
100 MHz/133 MHz
128MB or 256MB
1.5ns (-13E/-133)
0.8ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
(-13E/-133/-10E)
21
= +3.3V ±0.3V
66ns (-13E)
71ns (-133)
66ns (-10E)
2ns (-10E)
1ns (-10E)
2ns (-10E)
1ns (-10E)
MICRON
REV. 2.0
(-13E)
(-133)
(-10E)
1–12
t
1–9
RC -
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RP. Actual device spec value is 37ns
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
MT16LSDF3264H
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01–09
2D
20
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
95
E1
2C
00
64
CF
FF
©2004 Micron Technology, Inc. All rights reserved.
MT16LSDF6464H
Variable Data
Variable Data
Variable Data
Variable Data
01– 0C
01–09
40
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
B8
04
50
2C
00
64
CF
FF