MT16VDDF12864HG-40B Micron, MT16VDDF12864HG-40B Datasheet - Page 16

• Manufacturer Part Number: MT16VDDF12864HG-40B
• Description: DRAM Module, 128M x 64, 200-Pin DDR SDRAM SODIMM
• Manufacturer: Micron

Table 14: Capacitance
Note: 11; notes appear notes appear on pages 18–20
Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 18–20; 0°C £ T
09005aef80b577fa
DDAF16C64_128x64HG_A.fm - Rev. A 5/03 EN
PARAMETER
AC CHARACTERISTICS
PARAMETER
Input/Output Capacitance: DQ, DQS,DM
Input Capacitance: Command and Address, RAS#, CAS#, WE#
Input Capacitance:CK, CK#, CKE, S#
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to READ with Auto precharge command
Operating Conditions
CL=2.5
CL=2
CL = 3
16
A
SYMBOL
£ +70°C; V
t
t
CK (2.5)
t
t
t
DQSCK
t
t
t
t
t
CK (3)
CK (2)
DQSH
DQSQ
t
DIPW
DQSL
DQSS
t
t
t
t
MRD
t
t
t
t
DSH
t
t
QHS
t
t
t
IPW
RAP
t
DSS
t
t
t
DH
QH
AC
CH
IH
IH
DS
HP
HZ
CL
LZ
IS
IS
F
S
F
S
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
t
512MB, 1GB (x64) PC3200
HP -
= V
SYMBOL
-0.70
-0.60
-0.70
MIN
0.45
0.45
0.40
0.40
1.75
0.35
0.35
0.72
7.5
0.2
0.2
0.6
0.6
0.6
0.6
2.2
2.2
15
5
6
t
C
DD
C
C
QHS
IO
200-PIN DDR SODIMM
I1
I2
t
Q = +2.6V ±0.1V
CH,
-40B
t
CL
+0.70
+0.60
+0.70
MAX
0.55
0.55
0.40
1.28
0.50
7.5
13
13
MIN
24
12
7
UNITS
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MAX
©2003 Micron Technology, Inc.
40
20
9
NOTES
40, 46
40, 46
23, 27
23, 27
22, 23
16, 37
16, 38
22, 23
UNITS
26
26
27
30
12
12
12
12
pF
pF
pF