MT18VDDT6472 Micron, MT18VDDT6472 Datasheet - Page 24
![no-image](/images/no-image-200.jpg)
MT18VDDT6472
Manufacturer Part Number
MT18VDDT6472
Description
200-Pin DDR SDRAM SODIMMs (x72)
Manufacturer
Micron
Datasheet
1.MT18VDDT6472.pdf
(25 pages)
SERIAL PRESENCE-DETECT MATRIX (continued)
(Note: 1, 2)
*Supports concurrent auto precharge. Contact factory for additional information regarding this option.
NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
32, 64 Meg x 72 DDR SDRAM DIMMs
DD18C32_64X72AG_B.p65–Rev. B, Pub. 1/02
99-127 MANUFACTURER-SPECIFIC DATA (RSVD)
BYTE
36-40
46-61
65-71
73-90
95-98
33
34
35
41
42
43
44
45
62
63
64
72
91
92
93
94
2. x = Variable Data.
ADDRESS AND COMMAND HOLD TIME,
DATA/DATA MASK INPUT SETUP TIME,
DATA/DATA MASK INPUT HOLD TIME,
RESERVED
MINIMUM ACTIVE/AUTO REFRESH TIME,
(
MINIMUM AUTO REFRESH TO ACTIVE/
AUTO REFRESH COMMAND PERIOD, (
MAXIMUM CYCLE TIME, (
MAXIMUM DQS-DQ SKEW TIME,
(
MAXIMUM READ DATA HOLD SKEW
FACTOR, (
RESERVED
SPD REVISION
CHECKSUM FOR BYTES 0-62
MANUFACTURER’S JEDEC ID CODE
MANUFACTURER’S JEDEC ID CODE
(continued)
MANUFACTURING LOCATION
MODULE PART NUMBER (ASCII)
PCB IDENTIFICATION CODE
IDENTIFICATION CODE (continued)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
t
t
RC)
DQSQ)
t
QHS)
DESCRIPTION
t
CK (MAX))
t
RFC)
t
t
DH
DS
t
IH
ENTRY (VERSION)
t
0.5ns (-26A/-265)
CK (MAX) = 13ns
65ns (-26A/-265)
75ns (-26A/-265)
0.75 (-26A/-265)
1.0 (-26A/-265)
0.5 (-26A/-265)
0.5 (-26A/-265)
1.0ns (-202)
0.6ns (-202)
70ns (-202)
80ns (-202)
1.1 (-202)
0.6 (-202)
0.6 (-202)
MICRON
01–11
-26A
-265
-202
1–9
0
0
24
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-pin DDR SDRAM DIMMs
MT18VDDT3272AG
256MB, 512MB (ECC x72)
06/C6*
D1/91*
36/F6*
01–0B
01–09
A0
A0
B0
50
60
50
60
00
41
46
4B
50
34
32
3C
75
00
00
00
00
2C
x
x
x
x
–
MT18VDDT6472AG
01–0B
01–09
©2002, Micron Technology, Inc.
A0
B0
3C
A0
50
60
50
60
00
41
46
4B
50
34
32
75
00
00
E9
19
B4
2C
00
00
–
x
x
x
x