3SK298 Hitachi Semiconductor, 3SK298 Datasheet

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3SK298

Manufacturer Part Number
3SK298
Description
Silicon N-Channel Dual Gate MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Application
UHF / VHF RF amplifier
Features
Outline
Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
Capable of low voltage operation
CMPAK–4
Silicon N-Channel Dual Gate MOS FET
3
2
3SK298
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-390
1st. Edition

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3SK298 Summary of contents

Page 1

... Silicon N-Channel Dual Gate MOS FET Application UHF / VHF RF amplifier Features Low noise figure 1.0 dB typ 200 MHz Capable of low voltage operation Outline CMPAK–4 3SK298 Source 4 2. Gate1 3. Gate2 4. Drain ADE-208-390 1st. Edition ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Attention: This device is very sensitive to electro static discharge recommended to adopt appropriate cautions when handling this transistor. ...

Page 3

... Ciss 2.4 2.9 3.4 Coss 0.8 1.0 1.4 Crss — 0.023 0. — NF — 1.0 1 — NF — 3.2 4.5 NF — 2.8 3.5 3SK298 Unit Test conditions 200 – G1S V = –3 V G2S G2S G1S G1S G2S DS nA ...

Page 4

... Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Drain Current vs. Gate1 to Source Voltage 20 3.0 V 2.0 V 1 0.5 V G2S Gate1 to source voltage 150 200 Drain Current vs. Gate2 to Source Voltage ...

Page 5

... Power Gain vs. Drain Current 2 2.0 1.6 1 (V) G1S Power Gain vs. Drain to Source Voltage (mA) Drain to source voltage 3SK298 G2S f = 200 MHz Drain current I (mA G2S 200 MHz ...

Page 6

... Noise Figure vs. Drain to Source Voltage 2.0 1.6 1.2 0.8 0 Drain to source voltage Noise Figure vs. Drain Current Drain current G2S 200 MHz (V) DS Power Gain vs. Drain to Source Voltage ...

Page 7

... Noise Figure vs. Drain to Source Voltage G2S 900 MHz Drain to source voltage V 3SK298 = ( ...

Page 8

... S11 Parameter vs. Frequency 1.0 1 –.2 –.4 –.6 –1.5 –.8 –1 Condition 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 150 180 –150 –120 –90 Condition ...

Page 9

... S22 ANG. MAG. ANG. 76.9 0.993 –2.2 85.7 0.993 –4.5 78.2 0.991 –6.4 73.5 0.990 –8.5 68.7 0.987 –10.5 63.9 0.985 –12.5 64.3 0.982 –14.4 64.5 0.979 –16.2 60.9 0.975 –18.2 53.5 0.971 – ...

Page 10

Hitachi Code JEDEC EIAJ Weight (reference ...

Page 11

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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