3SK318 Hitachi Semiconductor, 3SK318 Datasheet

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3SK318

Manufacturer Part Number
3SK318
Description
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
Note: Marking is “YB–”.
Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
Excellent cross modulation characteristics
Capable low voltage operation; +B= 5V
Silicon N-Channel Dual Gate MOS FET
CMPAK-4
UHF RF Amplifier
3SK318
3
2
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-600(Z)
February 1998
1st. Edition

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3SK318 Summary of contents

Page 1

... Silicon N-Channel Dual Gate MOS FET Features Low noise characteristics; (NF= 1.4 dB typ 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline Note: Marking is “YB–”. 3SK318 UHF RF Amplifier CMPAK ADE-208-600(Z) February 1998 1. Source 2. Gate1 3 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics ( Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I ...

Page 3

... Gate1 to Source Voltage 150 200 Drain to Source Voltage (V) Gate2 to Source Voltage G1S 3SK318 Typical Output Characteristics G1S G2S 1.6 V 1.5 V 1.4 V 1.3 V 1.2 V 1.1 V 1.0 V 0 Drain Current vs. Gate2 to Source Voltage = 3 ...

Page 4

... Forward Transfer Admittance vs. Gate1 Voltage 3 0.4 0.8 Gate1 to Source Voltage Noise Figure vs. Drain Current Drain Current G2S 1.2 1.6 2.0 V (V) G1S 3 G2S 900 MHz ...

Page 5

... Drain to Source Voltage Noise Figure vs. Gate2 to Source Voltage 900MHz Gate2 to Source Voltage V Power Gain vs. Gate2 to Source Voltage 900MHz (V) Gate2 to Source Voltage 3 (V) G2S 3SK318 = 3 (V) G2S 5 5 ...

Page 6

... S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Test Condition : 10mA 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 150 180 –150 –120 –90 Test Condition : 10mA 1000 MHz (50 MHz step ...

Page 7

... S22 ANG MAG ANG 89.1 0.999 –2.2 88.5 0.996 –4.5 80.7 0.996 –6.7 76.6 0.994 –8.7 79.1 0.991 –11.0 75.4 0.988 –13.2 75.0 0.983 –15.3 78.0 0.980 –17.4 71 ...

Page 8

... Package Dimensions 2.0 0.2 1.3 0.65 0.65 + 0.1 0.3 – 0. 0.1 0.3 – 0.05 0.65 0.6 1. 0.1 0.3 – 0.05 + 0.1 0.4 – 0.05 + 0.1 0.16 – 0. 0.1 CMPAK-4 Hitachi Code SC-82AB EIAJ JEDEC — Unit: mm ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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