NE600 NXP Semiconductors, NE600 Datasheet

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NE600

Manufacturer Part Number
NE600
Description
1GHz LNA and mixer
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE600D
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
DESCRIPTION
The NE/SA600 is a combined low noise amplifier (LNA) and mixer
designed for high-performance low-power communication systems
from 800-1200MHz. The low-noise preamplifier has a 2dB noise
figure at 900MHz with 16dB gain and an IM
the input. Input and output impedances are 50 and the gain is
stabilized by on-chip compensation to vary less than 0.5dB over
the -40 to +85 C temperature range. The wide-dynamic-range
mixer has a 14dB noise figure and IM
input at 900MHz. Mixer input impedance is 50 with an
open-collector output. The chip incorporates an option so the LNA
can be disabled and replaced by a through connection. The
amplifier IM
signals can be handled. The nominal current drawn from a single
5V supply is 13mA and 4.2mA in the LNA thru mode.
FEATURES
ORDERING INFORMATION
BLOCK DIAGRAM
1993 Dec 15
14-Pin Plastic Small Outline (SO) package (Surface-mount)
14-Pin Plastic Small Outline (SO) package (Surface-mount)
Low current consumption: 13mA nominal, 4.2mA in the LNA thru
mode
Excellent noise figure: 2dB for the amplifier and 14dB for the
mixer at 900MHz
Excellent gain stability versus temperature
Switchable overload capability
Amplifier matched to 50
Mixer input matched to 50
Oscillator input matched to 50
1GHz LNA and mixer
3
intercept increases to +26dBm in this mode; thus, large
www.datasheet4u.com
V CCMX
V CC
14
1
DESCRIPTION
2
BIAS
COMP.
TEMP.
GAIN
1
3
IF OUT
GND B
intercept of +6dBm at the
13
2
3
intercept of -10dBm at
GND MX
RF INA
12
3
LNA
IF
Figure 2. Block Diagram
GND A1
RF INMX
11
4
RF
47
PIN CONFIGURATION
APPLICATIONS
LO
TEMPERATURE RANGE
900MHz front end for GSM/AMPS/TACS/ hand-held units
RF data links
UHF frequency conversion
Portable radio
Spread spectrum receivers
900MHz cordless phones
GND A2
BYPASS
10
5
-40 to +85 C
0 to +70 C
BYPASS
GND
GND
RF IN
GND
LO
V
GND LO
RF OUTA
CC
LO
Figure 1. Pin Configuration
A1
IN
B
A
9
6
1
2
3
4
5
6
7
D Package
ENABLE
POWER
DOWN
LO IN
AMP
ORDER CODE
8
7
NE600D
SA600D
14
13
12
11
10
9
8
Product specification
V
GND
GND
ENABLE
RF IN
IF
RF OUT
NE/SA600
CCMX
OUT
MX
A2
MX
853-1659 11649
A
SOT108-1
SOT108-1
DWG #
SR00082
SR00083

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NE600 Summary of contents

Page 1

... GND GND BYPASS 6 9 GND Figure 1. Pin Configuration ORDER CODE 0 to +70 C NE600D -40 to +85 C SA600D GND A2 RF OUTA ENABLE AMP POWER DOWN BYPASS GND Product specification NE/SA600 V CCMX IF OUT GND ...

Page 2

Philips Semiconductors 1GHz LNA and mixer ABSOLUTE MAXIMUM RATINGS SYMBOL Supply voltage CC CCMX www.datasheet4u.com V Voltage applied to any other pin CCMX G Any GND pin to any other ...

Page 3

Philips Semiconductors 1GHz LNA and mixer AC ELECTRICAL CHARACTERISTICS SYMBOL SYMBOL PARAMETER PARAMETER LNA ( +5V Enable = Hi, Test Figure 1, unless otherwise stated.) CC CCMX A www.datasheet4u.com S Amplifier gain 21 ...

Page 4

Philips Semiconductors 1GHz LNA and mixer TYPICAL APPLICATION +5V www.datasheet4u.com 1 0 INPUT 900MHz 100pF NE/SA600 4 BYPASS 5 0. 100pF LO INPUT 0dBm 1.0GHz NOTES: RATIO OF BYPASS TO SIGNAL COUPLING CAPS ...

Page 5

Philips Semiconductors 1GHz LNA and mixer NOTE: All performance curves include the effects of the NE/SA600 evaluation board. LNA S21 CHARACTERISTICS LNA S21 vs Frequency www.datasheet4u.com 40 30 ENABLE= ENABLE=LO –10 –20 10 100 FREQUENCY (MHz) LNA ...

Page 6

Philips Semiconductors 1GHz LNA and mixer LNA S11/S12/S22 CHARACTERISTICS LNA S11 vs Frequency and Temperature 0 –2 www.datasheet4u.com –4 –6 –40 C – – –12 –14 –16 –18 –20 800 900 1000 FREQUENCY (MHz) LNA S22 ...

Page 7

Philips Semiconductors 1GHz LNA and mixer LNA OVERLOAD/NOISE/DISTORTION CHARACTERISTICS 4. 5.5V, Test Fig. 1, unless otherwise specified. CC CCMX LNA Input 1dB Gain Compression Point vs Frequency 0 www.datasheet4u.com –5 –10 –15 –20 –25 –30 800 900 ...

Page 8

Philips Semiconductors 1GHz LNA and mixer MIXER GAIN/NOISE CHARACTERISTICS Mixer Voltage Conversion Gain vs LO Power 12 www.datasheet4u.com Frf = 900MHz Flo = 1GHz 4 Fif = 100MHz Scaled –10 –8 –6 –4 ...

Page 9

Philips Semiconductors 1GHz LNA and mixer MIXER OVERLOAD/DISTORTION CHARACTERISTICS Mixer Input 1dB Gain Compression Point vs LO Power 0 www.datasheet4u.com –1 –2 –3 –4 –5 –6 –7 –8 –9 –10 –10 –8 –6 –4 –2 LO POWER (dBm) Mixer Input ...

Page 10

Philips Semiconductors 1GHz LNA and mixer MIXER S11/ISOLATION/INTERFERENCE CHARACTERISTICS 4 5.5V, Test Fig. 1, unless otherwise specified CC CCMX Mixer S11 at RF Port www.datasheet4u.com vs Frequency and Temperature 0 –5 –10 –15 –20 –40 C –25 ...

Page 11

Philips Semiconductors 1GHz LNA and mixer OVERALL PERFORMANCE: ISOLATION CHARACTERISTICS 4 5.5V, Test Fig. 1, unless otherwise specified CC CCMX Isolation From LNA Output to Mixer RF Input vs Frequency www.datasheet4u.com 0 –10 –20 –30 –40 –50 ...

Page 12

Philips Semiconductors 1GHz LNA and mixer loss (and any other matching required). Typically, VG the NE/SA600 mixer with the net IF impedance equal to 500 . It is more common to express the conversion gain in terms of power, so ...

Page 13

Philips Semiconductors 1GHz LNA and mixer And last but not least, is the impedance matching at LNA inputs and outputs and mixer RF and LO input ports. Only those who have toiled through discrete transistor implementations for 50 input and ...

Page 14

Philips Semiconductors 1GHz LNA and mixer 16.5dB of gain with 2dB of noise figure. In this mode the current consumption is increased to 13mA. But for hand-held equipment, the average current consumption will be closer to 5-6mA. The other advantage ...

Page 15

Philips Semiconductors 1GHz LNA and mixer from Power Amp www.datasheet4u.com ANTENNA DUPLEXER 3 L1 15nH C3 10nF from VCO/Synthesizer UMA1014 1993 Dec 15 POWER DOWN 15k V CC 5.1k Q1 BCX17 ...

Page 16

Philips Semiconductors 1GHz LNA and mixer SILKSCREEN www.datasheet4u.com 1993 Dec 15 Figure 14. PC Board Layout 62 Product specification NE/SA600 TOP BOTTOM SR00095 ...

Page 17

Philips Semiconductors 1GHz LNA and mixer Total Supply Current vs Temperature www.datasheet4u.com –40 – TEMPERATURE ( C) LNA Noise Figure vs. Frequency and Shunt Inductance 3 2.8 2.6 2.4 ...

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