NE600 NXP Semiconductors, NE600 Datasheet
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NE600
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NE600 Summary of contents
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... GND GND BYPASS 6 9 GND Figure 1. Pin Configuration ORDER CODE 0 to +70 C NE600D -40 to +85 C SA600D GND A2 RF OUTA ENABLE AMP POWER DOWN BYPASS GND Product specification NE/SA600 V CCMX IF OUT GND ...
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Philips Semiconductors 1GHz LNA and mixer ABSOLUTE MAXIMUM RATINGS SYMBOL Supply voltage CC CCMX www.datasheet4u.com V Voltage applied to any other pin CCMX G Any GND pin to any other ...
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Philips Semiconductors 1GHz LNA and mixer AC ELECTRICAL CHARACTERISTICS SYMBOL SYMBOL PARAMETER PARAMETER LNA ( +5V Enable = Hi, Test Figure 1, unless otherwise stated.) CC CCMX A www.datasheet4u.com S Amplifier gain 21 ...
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Philips Semiconductors 1GHz LNA and mixer TYPICAL APPLICATION +5V www.datasheet4u.com 1 0 INPUT 900MHz 100pF NE/SA600 4 BYPASS 5 0. 100pF LO INPUT 0dBm 1.0GHz NOTES: RATIO OF BYPASS TO SIGNAL COUPLING CAPS ...
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Philips Semiconductors 1GHz LNA and mixer NOTE: All performance curves include the effects of the NE/SA600 evaluation board. LNA S21 CHARACTERISTICS LNA S21 vs Frequency www.datasheet4u.com 40 30 ENABLE= ENABLE=LO –10 –20 10 100 FREQUENCY (MHz) LNA ...
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Philips Semiconductors 1GHz LNA and mixer LNA S11/S12/S22 CHARACTERISTICS LNA S11 vs Frequency and Temperature 0 –2 www.datasheet4u.com –4 –6 –40 C – – –12 –14 –16 –18 –20 800 900 1000 FREQUENCY (MHz) LNA S22 ...
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Philips Semiconductors 1GHz LNA and mixer LNA OVERLOAD/NOISE/DISTORTION CHARACTERISTICS 4. 5.5V, Test Fig. 1, unless otherwise specified. CC CCMX LNA Input 1dB Gain Compression Point vs Frequency 0 www.datasheet4u.com –5 –10 –15 –20 –25 –30 800 900 ...
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Philips Semiconductors 1GHz LNA and mixer MIXER GAIN/NOISE CHARACTERISTICS Mixer Voltage Conversion Gain vs LO Power 12 www.datasheet4u.com Frf = 900MHz Flo = 1GHz 4 Fif = 100MHz Scaled –10 –8 –6 –4 ...
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Philips Semiconductors 1GHz LNA and mixer MIXER OVERLOAD/DISTORTION CHARACTERISTICS Mixer Input 1dB Gain Compression Point vs LO Power 0 www.datasheet4u.com –1 –2 –3 –4 –5 –6 –7 –8 –9 –10 –10 –8 –6 –4 –2 LO POWER (dBm) Mixer Input ...
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Philips Semiconductors 1GHz LNA and mixer MIXER S11/ISOLATION/INTERFERENCE CHARACTERISTICS 4 5.5V, Test Fig. 1, unless otherwise specified CC CCMX Mixer S11 at RF Port www.datasheet4u.com vs Frequency and Temperature 0 –5 –10 –15 –20 –40 C –25 ...
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Philips Semiconductors 1GHz LNA and mixer OVERALL PERFORMANCE: ISOLATION CHARACTERISTICS 4 5.5V, Test Fig. 1, unless otherwise specified CC CCMX Isolation From LNA Output to Mixer RF Input vs Frequency www.datasheet4u.com 0 –10 –20 –30 –40 –50 ...
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Philips Semiconductors 1GHz LNA and mixer loss (and any other matching required). Typically, VG the NE/SA600 mixer with the net IF impedance equal to 500 . It is more common to express the conversion gain in terms of power, so ...
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Philips Semiconductors 1GHz LNA and mixer And last but not least, is the impedance matching at LNA inputs and outputs and mixer RF and LO input ports. Only those who have toiled through discrete transistor implementations for 50 input and ...
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Philips Semiconductors 1GHz LNA and mixer 16.5dB of gain with 2dB of noise figure. In this mode the current consumption is increased to 13mA. But for hand-held equipment, the average current consumption will be closer to 5-6mA. The other advantage ...
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Philips Semiconductors 1GHz LNA and mixer from Power Amp www.datasheet4u.com ANTENNA DUPLEXER 3 L1 15nH C3 10nF from VCO/Synthesizer UMA1014 1993 Dec 15 POWER DOWN 15k V CC 5.1k Q1 BCX17 ...
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Philips Semiconductors 1GHz LNA and mixer SILKSCREEN www.datasheet4u.com 1993 Dec 15 Figure 14. PC Board Layout 62 Product specification NE/SA600 TOP BOTTOM SR00095 ...
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Philips Semiconductors 1GHz LNA and mixer Total Supply Current vs Temperature www.datasheet4u.com –40 – TEMPERATURE ( C) LNA Noise Figure vs. Frequency and Shunt Inductance 3 2.8 2.6 2.4 ...