NE662M16-T3 NEC, NE662M16-T3 Datasheet

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NE662M16-T3

Manufacturer Part Number
NE662M16-T3
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturer
NEC
Datasheet
• HIGH GAIN BANDWIDTH: f
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M16 PACKAGE:
FEATURES
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz f
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
ELECTRICAL CHARACTERISTICS
Notes:
• Flat Lead Style with a height of just 0.50mm
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S
SYMBOLS
|S
MSG
P
I
I
Cre
h
CBO
EBO
NF
IP
21E
f
1dB
FE
T
3
|
2
S
21
12
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain
Gain Bandwidth at V
Maximum Stable Gain
Insertion Power Gain at V
Noise Figure at V
Output Power at 1 dB compression point at
V
Third Order Intercept Point at V
Feedback Capacitance
CE
= 2 V, I
T
C
= 25 GHz
= 20 mA, f = 2 GHz
PARAMETERS AND CONDITIONS
EIAJ
CE
FREQUENCY TRANSISTOR
= 2 V, I
CE
2
PACKAGE OUTLINE
1
4
3
at V
= 3 V, I
REGISTERED NUMBER
at V
PART NUMBER
at V
CE
EB
CE
C
CE
CB
= 2 V, I
CB
= 5 mA, f = 2 GHz, Z
= 1 V, I
(T
= 2 V, I
C
= 2 V, I
= 5V, I
CE
= 2 V, I
A
= 30 mA, f = 2 GHz
= 25°C)
= 2 V, I
C
C
C
= 20 mA, f = 2 GHz
E
C
= 0
C
NPN SILICON HIGH
= 5 mA
= 0
= 20 mA, f = 2 GHz
= 0, f = 1 MHz
C
T
= 20 mA, f = 2 GHz
IN
= Z
M16
OPT
UNITS
GHz
dBm
nA
nA
dB
dB
dB
pF
MIN
50
20
14
NE662M16
NE662M16
2SC5704
M16
TYP
0.14
1.1
70
25
20
17
11
22
MAX
0.24
200
200
100
1.5

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NE662M16-T3 Summary of contents

Page 1

... DESCRIPTION The NE662M16 is fabricated using NEC's UHS0 25 GHz f wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications ...

Page 2

... T T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ORDERING INFORMATION PART NUMBER QUANTITY NE662M16-T3 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter) face the perforation side on the tape. 1 OUTLINE DIMENSIONS (T = 25°C) A UNITS RATINGS V ...

Page 3

... COLLECTOR CURRENT 1 000 100 10 0 Collector Current 25°C) A 125 150 (°C) A 0.8 1.0 ( 100 (mA) NE662M16 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0. MHz 0.16 0.12 0.08 0. Collector to Base Voltage, V (V) CB COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 µ 500 A 35 450 µ ...

Page 4

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG GHz ...

Page 5

TYPICAL PERFORMANCE CURVES NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR ...

Page 6

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 S21 S22 -j10 -j25 -j50 NE662M16 FREQUENCY S 11 GHz MAG ANG 0.100 0.79 -8.34 0.200 0.79 -20.52 0.300 0.78 -30.77 0.400 0.76 -39.87 0.500 0.74 -48.66 0.600 0.73 -56.79 0.700 0.71 -64.12 0.800 0.69 -71.30 0.900 0.68 -77.50 1.000 0.66 -83.36 1.100 0.65 -88.67 1.200 0.64 -93.70 1.300 0.64 -98.23 1.400 0.63 -102.48 1.500 0.62 -106.53 1 ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 25 50 100 0 10 S11 S22 -j10 -j25 -j50 NE662M16 FREQUENCY S 11 GHz MAG ANG 0.100 0.66 -12.81 0.200 0.66 -28.48 0.300 0.65 -41.93 0.400 0.63 -53.87 0.500 0.61 -64.70 0.600 0.60 -74.41 0.700 0.58 -82.86 0.800 0.57 -90.61 0.900 0.56 -97.18 1.000 0.55 -103.22 1.100 0.55 -108.53 1.200 0.54 -113.37 1.300 0.54 -117.69 1 ...

Page 8

... NE662M16 TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 S11 S22 -j10 -j25 -j50 NE662M16 FREQUENCY S 11 GHz MAG ANG 0.100 0.51 -19.24 0.200 0.51 -39.58 0.300 0.51 -56.67 0.400 0.51 -71.47 0.500 0.50 -83.85 0.600 0.50 -94.44 0.700 0.49 -103.20 0.800 0.49 -110.77 0.900 0.49 -117.07 1.000 0.49 -122.58 1.100 0.48 -127.34 1 ...

Page 9

... NE662M16 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 1.6e-16 MJC BF 105 XCJC NF 1.02 CJS VAF 23 VJS IKF 0.38 MJS ISE 1e XTF NR 1.02 VTF VAR 2.5 ITF IKR 0.1 PTF ISC 3e- 1. 1.1 XTB RB 6 XTI RBM 3.5 KF IRB 1.3e 8.75 CJE 0.4e-12 VJE 0.6 MJE ...

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