NE685M03 NEC, NE685M03 Datasheet

NE685M03

Manufacturer Part Number

NE685M03

Description

NPN SILICON TRANSISTOR

Manufacturer

NEC

Datasheet

1.NE685M03.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NE685M03-T1

Manufacturer:

NEC

Quantity:

20 000

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ELECTRICAL CHARACTERISTICS

FEATURES

DESCRIPTION

The NE685M03 transistor is designed for low noise, high gain,

and low cost requirements. This high f

very low voltage/low current designs for portable wireless

communications and cellular radio applications. NEC's new

low profile/flat lead style "M03" package is ideal for today's

portable wireless applications. The NE685 is also available in

six different low cost plastic surface mount package styles.

Notes:

• NEW M03 PACKAGE:

• HIGH GAIN BANDWIDTH PRODUCT:

• LOW NOISE FIGURE:

SYMBOLS

• Smallest transistor outline package available

• Low profile/0.59 mm package height

• Flat lead style for better RF performance

NF = 1.5 dB at 2 GHz

= 12 GHz

CBO

EBO

21E

FE 2

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

RE 3

Gain Bandwidth at V

Noise Figure at V

Insertion Power Gain at V

Forward Current Gain at V

Collector Cutoff Current at V

Emitter Cutoff Current at V

Feedback Capacitance at V

PARAMETERS AND CONDITIONS

= 3 V, I

EIAJ

NPN SILICON TRANSISTOR

= 3 V, I

part is well suited for

PRELIMINARY DATA SHEET

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

= 3 V, I

= 3 mA, f = 2 GHz

= 3 V, I

= 1 V, I

= 3 V, I

= 5 V, I

= 10 mA, f = 2 GHz

= 25°C)

= 10 mA

= 0

= 0, f = 1 MHz

= 0

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

OUTLINE DIMENSIONS

1.4 ±0.1

(0.9)

0.59±0.05

California Eastern Laboratories

0.45

UNITS

0.2±0.1

GHz

µA

PACKAGE OUTLINE M03

1.2±0.05

0.8±0.1

MIN

NE685M03

(Units in mm)

NE685M03

2SC5435

M03

TYP

1.5

0.4

0.3±0.1

0.15

-0.05

+0.1

MAX

140

2.5

0.1

0.7

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NE685M03 Summary of contents

Page 1

... GHz T • LOW NOISE FIGURE 1 GHz DESCRIPTION The NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high f T very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style " ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T T Junction Temperature J T Storage Temperature STG ...

Page 3

... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & ...

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