NE685M23 NEC, NE685M23 Datasheet
NE685M23
Manufacturer Part Number
NE685M23
Description
NPN SILICON TRANSISTOR
Manufacturer
NEC
Datasheet
1.NE685M23.pdf
(2 pages)
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
The NE685M23 transistor is designed for low noise, high gain,
and low cost requirements. This high f
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/ceramic substrate style "M23" package is ideal for
today's portable wireless applications. The NE685 is also
available in six different low cost plastic surface mount pack-
age styles.
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
• NEW MINIATURE M23 PACKAGE:
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
SYMBOLS
– World's smallest transistor package footprint —
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
f
NF = 1.5 dB at 2 GHz
T
|S
leads are completely underneath package body
C
= 12 GHz
h
I
I
NF
CBO
EBO
21E
f
FE 2
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
350 s, duty cycle
PARAMETERS AND CONDITIONS
EIAJ
CE
T
NPN SILICON TRANSISTOR
part is well suited for
= 3 V, I
CE
PRELIMINARY DATA SHEET
PACKAGE OUTLINE
1
REGISTERED NUMBER
= 3 V, I
PART NUMBER
CE
CE
EB
C
CB
CB
= 3 V, I
= 10 mA, f = 2 GHz
= 3 V, I
= 1 V, I
(T
C
= 3 V, I
= 5 V, I
A
= 10 mA, f = 2 GHz
= 25 C)
2 %.
C
C
C
= 7 mA, f = 2 GHz
E
= 10 mA
= 0
E
= 0, f = 1 MHz
= 0
OUTLINE DIMENSIONS
California Eastern Laboratories
UNITS
GHz
0.6
dB
dB
pF
A
A
PACKAGE OUTLINE M23
MIN
75
7
0.15
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
NE685M23
(Units in mm)
2
BOTTOM VIEW
NE685M23
2SC5652
0.2
0.5
1
M23
TYP
1.5
0.4
12
10
3
0.15
0.25
0.25
0.4
MAX
145
2.5
0.1
0.1
0.7
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NE685M23 Summary of contents
Page 1
... T • LOW NOISE FIGURE 1 GHz DESCRIPTION The NE685M23 transistor is designed for low noise, high gain, and low cost requirements. This high f very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications ...
Page 2
ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T T Junction Temperature J T Storage Temperature STG ...