NE687M23 NEC, NE687M23 Datasheet
NE687M23
Manufacturer Part Number
NE687M23
Description
NPN SILICON TRANSISTOR
Manufacturer
NEC
Datasheet
1.NE687M23.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
The NE687M23 transistor is designed for low noise, high gain,
and low cost requirements. This high f
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/ceramic substrate style "M23" package is ideal for
today's portable wireless applications. The NE687 is also
available in six different low cost plastic surface mount pack-
age styles.
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
• NEW MINIATURE M23 PACKAGE:
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
– World's smallest transistor package footprint —
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
f
NF = 1.5 dB at 2 GHz
SYMBOLS
T
leads are completely underneath package body
|S
= 5.5 GHz
C
h
I
I
NF
CBO
EBO
21E
FE 2
f
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
PARAMETERS AND CONDITIONS
350 s, duty cycle
EIAJ
CE
www.DataSheet4U.com
T
NPN SILICON TRANSISTOR
part is well suited for
= 1 V, I
CE
1
PACKAGE OUTLINE
PRELIMINARY DATA SHEET
REGISTERED NUMBER
PART NUMBER
= 1 V, I
CE
CE
EB
C
CB
CB
= 1 V, I
= 5 mA, f = 2 GHz
= 2 V, I
= 1 V, I
(T
= 0.5 V, I
C
= 5 V, I
A
= 5 mA, f = 2 GHz
= 25 C)
2 %.
C
C
C
= 5 mA, f = 2 GHz
= 20 mA
= 0
E
E
= 0
= 0, f = 1 MHz
OUTLINE DIMENSIONS
California Eastern Laboratories
UNITS
GHz
0.6
dB
dB
pF
A
A
PACKAGE OUTLINE M23
MIN
70
0.15
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
NE687M23
(Units in mm)
2
BOTTOM VIEW
NE687M23
2SC5653
0.2
0.5
1
M23
TYP
5.5
1.5
4.5
0.8
3
0.15
0.25
0.25
0.4
MAX
130
0.1
0.1
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NE687M23 Summary of contents
Page 1
... GHz T • LOW NOISE FIGURE 1 GHz DESCRIPTION The NE687M23 transistor is designed for low noise, high gain, and low cost requirements. This high f T very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications ...
Page 2
... NE687M23 ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ...