NE68800 NEC, NE68800 Datasheet
NE68800
Manufacturer Part Number
NE68800
Description
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturer
NEC
Datasheet
1.NE68800.pdf
(1 pages)
www.DataSheet4U.com
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
SCHEMATIC
Parameters
DATA SUBJECT TO CHANGE WITHOUT NOTICE
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
EXCLUSIVE NORTH AMERICAN AGENT FOR
0.796e-12
0.549e-12
3.8e-16
3.8e-15
3.5e-16
135.7
0.001
0.06
0.38
1.49
12.3
6.14
0.71
0.65
1.62
0.6
1.1
3.5
0.4
3.5
4.2
Q1
28
1
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
Parameters
XCJC
MJC
MJS
CJS
VJS
XTF
VTF
PTF
XTB
XTI
ITF
EG
FC
TR
KF
TF
AF
0.032e-9
11.0e-12
0.48
0.56
0.75
0.36
0.65
0.61
0.75
1.11
Q1
50
0
0
0
3
0
1
L
B
NONLINEAR MODEL
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
C
(1)
CB
L
E
ADDITIONAL PARAMETERS
UNITS
MODEL RANGE
Frequency:
Bias:
P1dB:
Date:
C
CE
Parameters
C
C
L
L
L
B
c
E
Parameter
time
capacitance
inductance
resistance
voltage
current
CB
CE
Q1
L
California Eastern Laboratories
C
0.1 to 10.0 GHz
V
12.5 dBm at V
10/3/96
CE
= 1 V to 3 V, I
PRINTED IN USA ON RECYCLED PAPER -10/98
CE
= 3 V, Ic = 10 mA, 2 GHz
C
0.24e-12
0.27e-12
0.72e-9
0.51e-9
0.19e-9
farads
henries
volts
amps
= 1 mA to 10 mA
seconds
ohms
68800
Units
NE68800
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