NE688M13 NEC, NE688M13 Datasheet
NE688M13
Manufacturer Part Number
NE688M13
Description
NPN SILICON TRANSISTOR
Manufacturer
NEC
Datasheet
1.NE688M13.pdf
(2 pages)
www.DataSheet4U.com
The NE688M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
• NEW MINIATURE M13 PACKAGE:
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
• HIGH COLLECTOR CURRENT:
SYMBOLS
– Small transistor outline –
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
f
NF = 1.7 dB at 2 GHz
I
T
C
|S
1.0 X 0.5 X 0.5 mm
C
= 9.5 GHz
MAX = 100 mA
h
I
I
NF
CBO
EBO
21E
f
FE 2
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
V
CE
CE
350 s, duty cycle
V
PARAMETERS AND CONDITIONS
= 3 V, I
CE
= 1 V, I
CE
EIAJ
NPN SILICON TRANSISTOR
= 3 V, I
= 1 V, I
V
PRELIMINARY DATA SHEET
CE
CE
1
PACKAGE OUTLINE
CE
EB
C
REGISTERED NUMBER
C
CB
CB
PART NUMBER
= 1 V, I
= 7 mA, f = 2 GHz
= 3 V, I
= 3 mA, f = 2 GHz
= 1 V, I
= 1 V, I
C
C
= 1 V, I
= 5 V, I
= 20 mA, f = 2 GHz
= 3 mA, f = 2 GHz
(T
C
C
A
C
C
= 3 mA, f = 2 GHz
E
= 20 mA, f = 2 GHz
= 25 C)
= 3 mA
E
= 0
2 %.
= 0, f = 1 MHz
= 0
1.0
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
+0.1
–0.05
0.5 0.05
0.1
2
1
California Eastern Laboratories
0.5
+0.1
–0.05
UNITS
GHz
GHz
dB
dB
dB
dB
pF
A
A
PACKAGE OUTLINE M13
3
0.125
0.1
+0.1
–0.05
0.7
MIN
80
4
3
0.15
0.35
0.35
0.15
+0.1
–0.05
NE688M13
(Units in mm)
+0.1
–0.05
NE688M13
2SC5616
1
2
M13
TYP
Bottom View
9.5
1.9
1.7
0.7
5
4
8
0.2
0.3
3
MAX
145
2.5
0.1
0.1
0.8
0.2
0.2
+0.1
–0.05
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NE688M13 Summary of contents
Page 1
... I MAX = 100 mA C DESCRIPTION The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles ...
Page 2
ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current Total Power Dissipation T Junction Temperature J T Storage Temperature ...