NE25139 NEC, NE25139 Datasheet

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NE25139

Manufacturer Part Number
NE25139
Description
GENERAL PURPOSE DUAL GATE GAAS MESFET
Manufacturer
NEC
Datasheet
1.NE25139.pdf (7 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE25139-T1
Manufacturer:
NEC
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE25139-T1-A
Manufacturer:
NEC
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE25139-T1-U72
Manufacturer:
NEC
Quantity:
20 000
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
• LOW C
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• L
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS
UHF TUNER
V
V
SYMBOL
G1
G1S (OFF)
G2S (OFF)
BV
I
I
C
|Y
I
C
G
G1SS
G2SS
NF
DSS
RSS
= 1.0 m, L
ISS
PS
FS
DSX
|
RSS
: 0.02 pF (TYP)
G2
Noise Figure at V
f = 900 MHz
Power Gain at V
f = 900 MHz
Drain to Source Breakdown Voltage at V
V
Saturated Drain Current at V
Gate 1 to Source Cutoff Voltage at V
V
Gate 2 to Source Cutoff Voltage at V
V
Gate 1 Reverse Current at V
Gate 2 Reverse Current at V
Forward Transfer Admittance at V
I
Input Capacitance at V
f = 1 MHz
Reverse Transfer Capacitance at V
I
D
D
G2S
G2S
G1S
= 1.5 m, W
= 10 mA, f = 1.0 kHz
= 10 mA, f = 1 MHz
= 0 V, I
= 0, I
= 0 V, I
PARAMETERS AND CONDITIONS
D
= 10 A
D
D
= 100 A
= 100 A
G
DS
PACKAGE OUTLINE
DS
= 400 m
= 5 V, V
PART NUMBER
= 5 V, V
DUAL-GATE GaAS MESFET
DS
= 5 V, V
G2S
G2S
DS
DS
DS
= 1 V, I
= 5 V, V
= 0, V
= 0, V
= 1 V, I
(T
G2S
DS
A
DS
= 25 C)
DS
DS
= 5 V, V
G1S
G2S
= 1 V, I
GENERAL PURPOSE
= 5 V, V
D
D
G2S
= 5 V,
= 5 V,
= 10 mA,
G1S
= -4V, V
= -4V, V
= 10 mA,
= 0 V, V
G2S
= -4 V,
D
G2S
= 10 mA,
= 1 V,
G2S
G1S
= 1 V,
G1S
= 0
= 0
= 0 V
20
10
0
California Eastern Laboratories
POWER GAIN AND NOISE FIGURE vs.
0
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
UNITS
mA
mS
dB
dB
pF
pF
V
V
V
A
A
5
MIN
-3.5
-3.5
0.5
16
13
18
5
I
f = 900 MHz
V
V
V
D
G2S
G2S
G2S
= 10 mA
NE25139
= 0.5 V
= 2 V
= 1 V
NE25139
G
DS
TYP
0.02
PS
1.1
1.0
NF
20
20
25
10
(V)
39
10
5
0
MAX
0.03
2.5
1.5
40
10
10
35

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NE25139 Summary of contents

Page 1

... NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE G2S V = 0.5 V G2S G2S 900 MHz Drain to Source Voltage, V (V) DS NE25139 39 UNITS MIN TYP dB 1 -3 0.5 1.0 pF ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate 1 to Source Voltage G1S V Gate 2 to Source Voltage G2S I Drain Current D P Total Power Dissipation T T Channel Temperature CH T Storage ...

Page 3

TYPICAL PERFORMANCE CURVES INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2 G2S D 1 G2S D -1.0 0 Gate 2 to ...

Page 4

NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter time capacitance inductance resistance voltage current FET NONLINEAR MODEL PARAMETERS Parameters FET1 UGW NGF IS 8.78e- RIS RID TAU 5.17e-12 CDSO 1.19e-13 C11O C11TH VINFL DELTGS DELTDS LAMBDA C11DELT ...

Page 5

NONLINEAR MODEL SCHEMATIC PORT P1 IND port = 3 Lg2 L = 0.40 PORT Pgate1 IND port = 1 Lg1 L = 1.65 CAP Cg2s C = 0.39 UNITS Parameter capacitance inductance resistance NOTES: 1. This UGW value scales the ...

Page 6

... TYPICAL COMMON SOURCE SCATTERING PARAMETERS j50 j10 100 150 250 S11 4 GHz -j10 S22 4 GHz -j25 -j50 NE25139 G2S DS FREQUENCY S 11 (GHz) MAG ANG 0.1 1.0 -4 0.2 1.0 -8 0.4 0.99 -15 0.6 0.97 -23 0.9 0.94 -35 1.0 0.92 -39 1.5 0.82 -61 2.0 0.69 -86 2.5 0.60 -110 3.0 0.51 -131 3.5 0.51 -147 4.0 0.63 -167 Note: 1. Gain Calculations: ...

Page 7

... ORDERING INFORMATION PART +0.10 0.4 -0.05 NUMBER (LEADS NE25139 NE25139-T1 1.9 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 NE25139T1U73 NE25139U74 0.16 +0.10 NE25139T1U74 -0.06 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS ( ˚ +90 ˚ ˚ +120 +60 S21 1.2 GHz ˚ +150 ˚ +180 .5 .10 .15 .20 – ...

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