NE25139 NEC, NE25139 Datasheet
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NE25139
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NE25139 Summary of contents
Page 1
... NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE G2S V = 0.5 V G2S G2S 900 MHz Drain to Source Voltage, V (V) DS NE25139 39 UNITS MIN TYP dB 1 -3 0.5 1.0 pF ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate 1 to Source Voltage G1S V Gate 2 to Source Voltage G2S I Drain Current D P Total Power Dissipation T T Channel Temperature CH T Storage ...
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TYPICAL PERFORMANCE CURVES INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2 G2S D 1 G2S D -1.0 0 Gate 2 to ...
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NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter time capacitance inductance resistance voltage current FET NONLINEAR MODEL PARAMETERS Parameters FET1 UGW NGF IS 8.78e- RIS RID TAU 5.17e-12 CDSO 1.19e-13 C11O C11TH VINFL DELTGS DELTDS LAMBDA C11DELT ...
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NONLINEAR MODEL SCHEMATIC PORT P1 IND port = 3 Lg2 L = 0.40 PORT Pgate1 IND port = 1 Lg1 L = 1.65 CAP Cg2s C = 0.39 UNITS Parameter capacitance inductance resistance NOTES: 1. This UGW value scales the ...
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... TYPICAL COMMON SOURCE SCATTERING PARAMETERS j50 j10 100 150 250 S11 4 GHz -j10 S22 4 GHz -j25 -j50 NE25139 G2S DS FREQUENCY S 11 (GHz) MAG ANG 0.1 1.0 -4 0.2 1.0 -8 0.4 0.99 -15 0.6 0.97 -23 0.9 0.94 -35 1.0 0.92 -39 1.5 0.82 -61 2.0 0.69 -86 2.5 0.60 -110 3.0 0.51 -131 3.5 0.51 -147 4.0 0.63 -167 Note: 1. Gain Calculations: ...
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... ORDERING INFORMATION PART +0.10 0.4 -0.05 NUMBER (LEADS NE25139 NE25139-T1 1.9 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 NE25139T1U73 NE25139U74 0.16 +0.10 NE25139T1U74 -0.06 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS ( ˚ +90 ˚ ˚ +120 +60 S21 1.2 GHz ˚ +150 ˚ +180 .5 .10 .15 .20 – ...