2SA1029 Hitachi Semiconductor, 2SA1029 Datasheet - Page 2

• Manufacturer Part Number: 2SA1029
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA1029, 2SA1030
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note:
2SA1029
2SA1030
See characteristic curves of 2SA1031 and 2SA1032.
2
1. The 2SA1029 and 2SA1030 are grouped by h
B
100 to 200
100 to 200
Symbol
V
V
V
I
I
h
V
Cob
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
*
1
C
160 to 320
160 to 320
2SA1029
Min
–30
–30
–5
—
—
100
—
—
200
—
Symbol
V
V
V
I
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
280
3.3
D
250 to 500
—
C
E
CBO
CEO
EBO
C
Max
—
—
—
–0.5
–0.5
500
–0.8
–0.2
—
4.0
2SA1030
Min
–55
–50
–5
—
—
100
—
—
200
—
FE
as follows.
2SA1029
–30
–30
–5
–100
100
300
150
–55 to +150
Typ
—
—
—
—
—
—
—
—
280
3.3
Max
—
—
—
–0.5
–0.5
320
–0.8
–0.2
—
4.0
2SA1030
–55
–50
–5
–100
100
300
150
–55 to +150
Unit
V
V
V
V
V
MHz
pF
A
A
Test conditions
I
I
I
V
V
V
I
V
I
I
I
V
I
V
f = 1 MHz
C
C
E
C
C
C
B
C
CB
EB
CE
CE
CB
CB
= –10 A, I
= –1 mA
= –10 A, I
= –1 mA, R
= –2 mA
= –2 mA
= –10 mA,
= –2 mA
= –18 V, I
= –2 V, I
= –12 V,
= –12 V,
= –12 V,
= –10 V, I
Unit
V
V
V
mA
mA
mW
C
C
C
C
E
E
E
BE
= 0
= 0
= 0
= 0
= 0,
=