2SA1121 Hitachi Semiconductor, 2SA1121 Datasheet - Page 2

• Manufacturer Part Number: 2SA1121
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA1121
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Collector to emitter saturation
voltage
DC current transfer ratio
Base to emitter voltage
Note:
Grade
Mark
h
See characteristic curves of 2SA673.
2
FE
1. The 2SA1121 is grouped by h
B
SB
60 to 120
C
SC
100 to 200
Symbol
V
V
V
I
V
h
h
V
CBO
FE
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
FE
Min
–35
–35
–4
—
—
60
10
—
D
SD
160 to 320
as follows.
Symbol
V
V
V
I
P
Tj
Tstg
Typ
—
—
—
—
–0.2
—
—
–0.64
C
CBO
CEO
EBO
C
Max
—
—
—
–0.5
–0.6
320
—
—
Unit
V
V
V
V
V
A
Ratings
–35
–35
–4
–500
150
150
–55 to +150
Test conditions
I
I
I
V
I
V
V
(Pulse test)
V
C
C
E
C
CB
CE
CE
CE
= –10 A, I
= –10 A, I
= –1 mA, R
= –150 mA, I
= –20 V, I
= –3 V, I
= –3 V, I
= –3 V, I
C
C
Unit
V
V
V
mA
mW
C
C
C
C
E
E
= –10 mA
= –500 mA
BE
= –10 mA
= 0
= 0
= 0
B
=
= –15 mA