2SA1617 Hitachi Semiconductor, 2SA1617 Datasheet

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2SA1617

Manufacturer Part Number
2SA1617
Description
Silicon PNP Epitaxial
Manufacturer
Hitachi Semiconductor
Datasheet
Application
High voltage amplifier
Outline
MPAK
3
Silicon PNP Epitaxial
2SA1617
2
1
1. Emitter
2. Base
3. Collector

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2SA1617 Summary of contents

Page 1

... Application High voltage amplifier Outline MPAK 2SA1617 Silicon PNP Epitaxial Emitter 2. Base 2 3. Collector ...

Page 2

... Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: 1. The 2SA1617 is grouped by h Grade B C Mark VIB VIC h 100 to 200 160 to 320 FE See charcteristic curves of 2SA1031 ...

Page 3

... Maximum Collector Dissipation Curve 150 100 100 Ambient Temperature 2SA1617 150 3 ...

Page 4

Hitachi Code MPAK JEDEC — EIAJ Conforms Weight (reference value) 0.011 g Unit: mm ...

Page 5

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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