2SA1648 NEC, 2SA1648 Datasheet

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2SA1648

Manufacturer Part Number
2SA1648
Description
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Manufacturer
NEC
Datasheet

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www.DataSheet4U.com
( DataSheet : www.DataSheet4U.com )
Document No. D16121EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
speed switching and features a very low collector-to-emitter
saturation voltage.
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
• Mold package that does not require an insulating board or
• Low collector saturation voltage:
• Fast switching speed:
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 300
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation (Tc = 25°C)
Total power dissipation (Ta = 25°C)
Junction temperature
Storage temperature
hybrid IC.
insulation bushing
V
t
f
The 2SA1648 is a mold power transistor developed for high-
This transistor is ideal for use in switching regulators, DC/DC
CE(sat)1
= 0.3
2. Printing board mounted
3. 7.5 mm
µ
= −0.3 V MAX. (I
s MAX. (I
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2
× 0.7 mm ceramic board mounted
C
µ
= −3.0 A)
s, Duty Cycle ≤ 10%
C
= −3.0 A)
PNP SILICON EPITAXIAL TRANSISTOR
I
C(pulse)
Symbol
I
V
V
V
I
FOR HIGH-SPEED SWITCHING
C(DC)
B(DC)
T
P
P
CBO
CEO
EBO
T
stg
The mark
T
T
j
Note 1
A
= 25°C)
1.0
−55 to +150
Note 2
Ratings
DATA SHEET
−100
−7.0
−5.0
−2.5
−60
−10
150
shows major revised points.
18
, 2.0
Note 3
Unit
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
2SA1648,1648-Z
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector (Fin)
PACKAGE DRAWINGS (Unit: mm)
1.1 ±0.2
1.1±0.2
TO-252 (MP3Z)
TO-251 (MP-3)
1
6.5 ±0.2
5.0 ±0.2
2.3
1
6.5±0.2
5.0±0.2
2.3 2.3
2
2.3
2
4
3
4
3
MAX.
0.9
c
MAX.
0.8
2.3±0.2
2.3 ±0.2
0.8
0.5±0.1
0.5 ±0.1
2002

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2SA1648 Summary of contents

Page 1

... DataSheet : www.DataSheet4U.com ) The 2SA1648 is a mold power transistor developed for high- speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. ...

Page 2

... −I = −0. ≅ − Refer to SWITCHING TIME TEST CIRCUIT. K 200 to 400 Base current waveform Collector current waveform Data Sheet D16121EJ3V0DS 2SA1648,1648-Z TYP. MAX. Unit V V µ −10 A −1.0 mA µ −10 A −1.0 mA µ −10 A 200 400 − ...

Page 3

... Case Temperature T C Collector to Emitter Voltage V Collector to Emitter Voltage V = 25°C) (°C) Case Temperature 25°C C Single pulse (V) CE Pulse Width PW (s) (V) Collector Current I CE Data Sheet D16121EJ3V0DS 2SA1648,1648-Z (° 25°C C Single pulse R = 125 °C/W th(j−A) = 6.94 °C/W R th(j−C) Pulse test ( ...

Page 4

... Collector Current I Collector to Base Voltage • Collector Current • Pulse test (A) Collector Current (V) Collector to Emitter Voltage −20 A • (A) C Data Sheet D16121EJ3V0DS 2SA1648,1648 25°C C (A) C (V) CE ...

Page 5

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SA1648,1648-Z M8E 02. 11-1 ...

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