2SA1960 Hitachi Semiconductor, 2SA1960 Datasheet - Page 3

• Manufacturer Part Number: 2SA1960
• Description: Silicon NPN Epitaxial
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Collector to base cutoff current
Emitter to base cutoff current
DC current transfer ratio
Gain bandwidth product
Emitter input capacitance
Collector output capacitance
Symbol
V
V
I
I
h
f
Cib
Cob
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
Min
–80
–80
—
—
20
1.1
—
—
Typ
—
—
—
—
60
1.3
14.5
2.9
Max
—
—
–1.0
–10
—
—
18
4.0
Unit
V
V
GHz
pF
pF
A
A
Test conditions
I
I
I
R
V
I
V
I
V
Pulse test
V
I
V
f = 1 MHz
V
f = 1 MHz
C
E
C
E
C
C
CB
EB
CE
CE
EB
CB
BE
= 0
= 0
= –100 A
= –1 mA
= 0
= –50 mA
=
= –60 V
= –3 V
= –5 V, I
= –10 V
= 0, I
= –10 V, I
C
= 0
C
E
= –50 mA
= 0
2SA1960
3