2SA2058 Toshiba Semiconductor, 2SA2058 Datasheet - Page 4

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2SA2058

Manufacturer Part Number
2SA2058
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type
Manufacturer
Toshiba Semiconductor
Datasheet

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−0.01
−0.1
−10
−1
−0.1
♦: Single nonrepetitive pulse
Note that the curves for
100 ms*, 10 s* and DC
operation* will be different when
the devices aren’t mounted on an
FR4 board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm
characteristic curves must be
derated linearly with increase in
temperature.
DC operation *
I C max (pulsed) ♦
I C max (continuous)
(Ta = 25°C)
Ta = 25°C
Collector-emitter voltage V
1000
Safe Operating Area
100
10
0.001
−1
1
2
). These
10 ms♦ 1 ms♦
0.01
−10
CE
10 s♦*
100 ms♦*
(V)
0.1
−100
Pulse width t
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm
r
th
4
– t
1
w
w
2
)
(s)
10
100
1000
2001-10-29
2SA2058

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