MT8JTF12864HY-1G1 Micron, MT8JTF12864HY-1G1 Datasheet - Page 10

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MT8JTF12864HY-1G1

Manufacturer Part Number
MT8JTF12864HY-1G1
Description
1GB DDR3 SDRAM SODIMM
Manufacturer
Micron
Datasheet
DRAM Operating Conditions
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Design Considerations
Simulations
Power
PDF: 09005aef82b36df5
Rev. C 8/09 EN
Module Speed Grade
-1G6
-1G4
-1G1
-1G0
-80C
-80B
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system’s memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB (x64, SR) 204-Pin DDR3 SDRAM SODIMM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
Component Speed Grade
Electrical Specifications
-187E
-125
-15E
-187
-25E
-25
©2007 Micron Technology, Inc. All rights reserved.

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