2SA836 Hitachi Semiconductor, 2SA836 Datasheet
2SA836
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2SA836 Summary of contents
Page 1
... Application Low frequency low noise amplifier Outline TO-92 (1) 2SA836 Silicon PNP Epitaxial 1. Emitter 2. Collector 3. Base ...
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... Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figuer Note: 1. The 2SA836 is grouped 160 to 320 250 to 500 2 Symbol V CBO V CEO V ...
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... Typical Output Characteristics –10 –8 –6 –4 –2 0 –2 150 Collector to Emitter Voltage V DC Current Transfer Ratio vs. Collector Current 10,000 1,000 100 10 –10 –100 Collector Current I 2SA836 –10 – –4 –6 –8 –10 ( – –1 m –10 m –50 m (A) ...
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... Collector Output Capacitance vs. Collector to Base Voltage MHz –1 –2 –5 –10 Collector to Base Voltage V 4 100 500 200 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 –20 –50 (V) CB ...
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Max 0.5 0.1 1.27 2.54 3.8 0.3 0.5 Hitachi Code TO-92 (1) JEDEC Conforms EIAJ Conforms Weight (reference value) 0.25 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...