BFU760F NXP Semiconductors, BFU760F Datasheet - Page 3

• Manufacturer Part Number: BFU760F
• Description: wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BFU760F
Product data sheet
www.DataSheet4U.net
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
Type number
BFU760F
Symbol
V
V
V
I
P
T
T
Symbol
R
C
Fig 1.
stg
j
CBO
CEO
EBO
tot
th(j-sp)
T
sp
is the temperature at the solder point of the emitter lead.
Power derating curve
Parameter
thermal resistance from junction to solder point
Marking
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
(mW)
P
tot
250
200
150
100
Rev. 1 — 29 April 2011
50
0
0
Marking
D7*
40
Conditions
open emitter
open base
open collector
T
NPN wideband silicon germanium RF transistor
sp
≤ 90 °C
80
120
T
001aam862
[1]
sp
(°C)
Min
-
-
-
-
-
−65
-
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
160
Conditions
Max
10
2.8
1.0
70
220
+150
150
BFU760F
© NXP B.V. 2011. All rights reserved.
Typ
270
Unit
V
V
V
mA
°C
°C
mW
Unit
K/W
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