PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 5
PBSS304NX
Manufacturer Part Number
PBSS304NX
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS304NX.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS304NX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PBSS304NXЈ¬115
Manufacturer:
NXP
Quantity:
4 000
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NXP Semiconductors
PBSS304NX_2
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
−1
−1
1
1
2
10
2
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0
0.75
0.33
0.75
0.33
10
10
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
10
10
2
Rev. 02 — 20 November 2009
−2
−2
10
10
−1
−1
60 V, 4.7 A NPN low V
1
1
10
10
PBSS304NX
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa558
006aaa559
(s)
(s)
10
10
3
3
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